SCHEMBL61895

SCHEMBL61895

[GeH4].[SbH3].[TeH]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3746082 0.87
SCHEMBL3744145 0.87
SCHEMBL9898344 0.87
SCHEMBL216421 0.87
SCHEMBL6092959 0.87
SCHEMBL1206085 0.87
SCHEMBL338100 0.82
SCHEMBL315676 0.82
SCHEMBL560633 0.82
Hydrogen Sulfide SCHEMBL23242951 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1420 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-122094405-A Phase change memory cell and in-memory computing circuit 2026-05-26 CN claimed
CN-116130463-B Electromagnetic radiation resistant semiconductor device and electromagnetic radiation resistant method 晋芯电子制造(山西)有限公司 2026-05-22 CN claimed
US-20260081356-A1 ANTENNA ELEMENT, ANTENNA ARRAY, COMMUNICATION APPARATUS, AND CONTROL METHOD HUAWEI TECHNOLOGIES CO., LTD. (CN) 2026-03-19 US claimed
EP-4708564-A1 ANTENNA UNIT, ANTENNA ARRAY, COMMUNICATION DEVICE, AND CONTROL METHOD Huawei Technologies Co., Ltd. (CN) 2026-03-11 EP claimed
US-12543350-B2 Semiconductor structure and method for fabricating same CHANGXIN MEMORY TECHNOLOGIES, INC. (CN) 2026-02-03 US claimed
US-20250359072-A1 PHASE-CHANGE DEVICE STRUCTURE TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2025-11-20 US claimed
US-12431351-B2 Method of forming germanium antimony tellurium film SAMSUNG ELECTRONICS CO., LTD. (KR) 2025-09-30 US claimed
US-20250256349-A1 LASER BEAM MACHINING METHOD TARGETED AT CHALCOGENIDE MATERIALS AND INTEGRATED PHOTONIC DEVICE SUN YAT-SEN UNIVERSITY (CN) 2025-08-14 US claimed
CN-114127624-B Optical device for modulating incident light IMEC 非营利协会 2025-06-24 CN claimed
WO-2025123585-A1 LASER PROCESSING METHOD BASED ON CHALCOGENIDE MATERIAL, AND INTEGRATED PHOTONIC DEVICE 中山大学 2025-06-19 WO claimed
CN-101335258-A Laser fuse device capable of reprogramming and method for continuously regulating resistance of fuse wire SHANGHAI INST MICROSYS & INF (CN) 2008-12-31 CN claimed
CN-101299453-A Nano composite phase-changing material and preparation method thereof SHANGHAI INST MICROSYS & INF (CN) 2008-11-05 CN claimed
WO-2008124444-A1 METHODS TO FORM WIDE HEATER TRENCHES AND TO FORM MEMORY CELLS TO ENGAGE HEATERS MARVELL WORLD TRADE LTD. (BB) 2008-10-16 WO claimed
US-20080246015-A1 METHOD TO FORM HIGH EFFICIENCY GST CELL USING A DOUBLE HEATER CUT MARVELL ASIA PTE, LTD. (SG) 2008-10-09 US claimed
CN-100386882-C Nonvolatile memory and operating method thereof MACRONIX INT CO LTD (CN) 2008-05-07 CN claimed
CN-101110238-A Rewritable optical disc RITEK CORP (CN) 2008-01-23 CN claimed
EP-1878064-A1 METHOD AND STRUCTURE FOR PELTIER-CONTROLLED PHASE CHANGE MEMORY International Business Machines Corporation (US) 2008-01-16 EP claimed
US-20070159868-A1 Nonvolatile memory device SHARP KABUSHIKI KAISHA (JP) 2007-07-12 US claimed
WO-2006121473-A1 METHOD AND STRUCTURE FOR PELTIER-CONTROLLED PHASE CHANGE MEMORY INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-11-16 WO claimed
US-20060249724-A1 Method and structure for Peltier-controlled phase change memory INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-11-09 US claimed