⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Selenium SCHEMBL30277717 | 0.82 | — | — | |
| Selenium SCHEMBL338070 | 0.82 | — | — | |
| Selenium SCHEMBL29456066 | 0.82 | — | — | |
| Selenium SCHEMBL321739 | 0.82 | — | — | |
| Selenium SCHEMBL2539071 | 0.82 | — | — | |
| SCHEMBL41821 | 0.82 | — | — | |
| Selenium SCHEMBL3277799 | 0.78 | — | — | |
| Selenium SCHEMBL9424162 | 0.67 | — | — | |
| Selenium SCHEMBL2452564 | 0.67 | — | — | |
| Selenium SCHEMBL5244386 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-107206346-A | Utilize the nano-particle preparation method of laser | 授纳诺有限公司 | 2017-09-26 | — | — | CN | disclosed |
| US-8097873-B2 | Phase change memory structures | FREESCALE SEMICONDUCTOR, INC. (US) | 2012-01-17 | — | — | US | disclosed |
| US-20110001113-A1 | PHASE CHANGE MEMORY STRUCTURES | FREESCALE SEMICONDUCTOR, INC. (US) | 2011-01-06 | — | — | US | disclosed |
| US-7811851-B2 | Phase change memory structures | FREESCALE SEMICONDUCTOR, INC. (US) | 2010-10-12 | — | — | US | disclosed |
| WO-2010062582-A2 | VAPOR DEPOSITION METHOD FOR TERNARY COMPOUNDS | APPLIED MATERIALS, INC. (US) | 2010-06-03 | — | — | WO | disclosed |
| US-7719039-B2 | Phase change memory structures including pillars | FREESCALE SEMICONDUCTOR, INC. (US) | 2010-05-18 | — | — | US | disclosed |
| US-20100102417-A1 | VAPOR DEPOSITION METHOD FOR TERNARY COMPOUNDS | APPLIED MATERIALS, INC. (US) | 2010-04-29 | — | — | US | disclosed |
| WO-2009045635-A2 | PHASE CHANGE MEMORY STRUCTURES | FREESCALE SEMICONDUCTOR INC. (US) | 2009-04-09 | — | — | WO | disclosed |
| WO-2009042293-A1 | PHASE CHANGE MEMORY STRUCTURES | FREESCALE SEMICONDUCTOR INC. (US) | 2009-04-02 | — | — | WO | disclosed |
| US-20090085023-A1 | PHASE CHANGE MEMORY STRUCTURES | NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC. (NL) | 2009-04-02 | — | — | US | disclosed |
| US-20090085024-A1 | PHASE CHANGE MEMORY STRUCTURES | NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC. (NL) | 2009-04-02 | — | — | US | disclosed |