⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL338715 | 0.89 | — | — | |
| SCHEMBL27620118 | 0.89 | — | — | |
| SCHEMBL36654 | 0.89 | — | — | |
| SCHEMBL28859033 | 0.89 | — | — | |
| SCHEMBL23701679 | 0.80 | — | — | |
| SCHEMBL4229074 | 0.80 | — | — | |
| SCHEMBL15856059 | 0.80 | — | — | |
| SCHEMBL4376282 | 0.80 | — | — | |
| SCHEMBL2762535 | 0.80 | — | — | |
| SCHEMBL5586427 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 69 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10304749-B2 | Method and apparatus for improved etch stop layer or hard mask layer of a memory device | INTEL CORPORATION (US) | 2019-05-28 | — | — | US | claimed |
| CN-109103076-A | Method and apparatus for an improved etch stop layer or hard mask layer for a memory device | 英特尔公司 | 2018-12-28 | — | — | CN | claimed |
| US-20180366386-A1 | METHOD AND APPARATUS FOR IMPROVED ETCH STOP LAYER OR HARD MASK LAYER OF A MEMORY DEVICE | INTEL CORPORATION (US) | 2018-12-20 | — | — | US | claimed |
| US-8008700-B2 | Non-volatile memory cell with embedded antifuse | SANDISK 3D LLC (US) | 2011-08-30 | — | — | US | claimed |
| US-7830697-B2 | High forward current diodes for reverse write 3D cell | SANDISK 3D LLC (US) | 2010-11-09 | — | — | US | claimed |
| JP-2010531543-A | — | — | 2010-09-24 | — | — | JP | claimed |
| CN-101720485-A | High forward current diode for reverse write 3D cells and method of making same | SANDISK 3D LLC | 2010-06-02 | — | — | CN | claimed |
| WO-2010059672-A1 | INTEGRATION OF DAMASCENE TYPE DIODES AND CONDUCTIVE WIRES FOR MEMORY DEVICE | SANDISK 3D LLC (US) | 2010-05-27 | — | — | WO | claimed |
| US-20100127358-A1 | Integration of damascene type diodes and conductive wires for memory device | SANDISK 3D LLC | 2010-05-27 | — | — | US | claimed |
| EP-2165336-A1 | HIGH FORWARD CURRENT DIODES FOR REVERSE WRITE 3D CELL AND METHOD OF MAKING THEREOF | Sandisk 3D LLC (US) | 2010-03-24 | — | — | EP | claimed |
| US-7684226-B2 | Method of making high forward current diodes for reverse write 3D cell | SANDISK 3D LLC (US) | 2010-03-23 | — | — | US | claimed |
| WO-2009002477-A1 | HIGH FORWARD CURRENT DIODES FOR REVERSE WRITE 3D CELL AND METHOD OF MAKING THEREOF | SANDISK 3D LLC (US) | 2008-12-31 | — | — | WO | claimed |
| US-20080316796-A1 | Method of making high forward current diodes for reverse write 3D cell | SANDISK 3D LLC | 2008-12-25 | — | — | US | claimed |
| US-20080316809-A1 | High forward current diodes for reverse write 3D cell | SANDISK 3D LLC | 2008-12-25 | — | — | US | claimed |
| US-20080017912-A1 | Non-volatile memory cell with embedded antifuse | SANDISK 3D LLC | 2008-01-24 | — | — | US | claimed |
| US-12641872-B2 | Semiconductor device and a method of manufacturing the semiconductor device | SK Hynix Inc. (KR) | 2026-05-26 | — | — | US | disclosed |
| CN-117637751-A | Semiconductor device and method for manufacturing the same | 爱思开海力士有限公司 | 2024-03-01 | — | — | CN | disclosed |
| US-20080013364-A1 | Method of making non-volatile memory cell with embedded antifuse | SANDISK 3D LLC | 2008-01-17 | — | — | US | disclosed |
| US-20070272974-A1 | TWIN-GATE NON-VOLATILE MEMORY CELL AND METHOD OF OPERATING THE SAME | EMEMORY TECHNOLOGY INC. (TW) | 2007-11-29 | — | — | US | disclosed |
| CN-1926668-A | Formation of a silicon oxynitride layer on a high-K dielectric material | APPLIED MATERIALS INC (US) | 2007-03-07 | — | — | CN | disclosed |