SCHEMBL4229074

SCHEMBL4229074

O=[SiH2].[Hf].[Hf].[Si]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL36654 0.89
SCHEMBL28859033 0.89
SCHEMBL17363163 0.89
SCHEMBL20768711 0.89
SCHEMBL2517318 0.80
Ammonia Solution, Strong SCHEMBL19376783 0.80
SCHEMBL19876572 0.80
Water SCHEMBL20711056 0.80
Methane SCHEMBL17923677 0.80
SCHEMBL3283087 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7482677-B2 Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structures SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-01-27 US disclosed
US-20060244147-A1 Dielectric structures having high dielectric constants, methods of forming the dielectric structures, non-volatile semiconductor memory devices having the dielectric structures and methods of manufacturing the non-volatile semiconductor memory devices SAMSUNG ELECTRONICS CO., LTD. 2006-11-02 US disclosed