⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28859033 | 1.00 | — | — | |
| SCHEMBL338437 | 0.89 | — | — | |
| SCHEMBL2517318 | 0.89 | — | — | |
| Ammonia Solution, Strong SCHEMBL19376783 | 0.89 | — | — | |
| SCHEMBL4229074 | 0.89 | — | — | |
| SCHEMBL3283087 | 0.89 | — | — | |
| SCHEMBL19876572 | 0.89 | — | — | |
| SCHEMBL15213 | 0.87 | — | — | |
| SCHEMBL25223707 | 0.82 | — | — | |
| SCHEMBL562096 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 29382 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12641802-B2 | Liner to form composite high-K dielectric | APPLIED MATERIALS, INC. (US) | 2026-05-26 | — | — | US | claimed |
| CN-224265381-U | Ferroelectric field effect transistor | 上海深明奥思半导体科技有限公司 | 2026-05-19 | — | — | CN | claimed |
| US-12628383-B2 | Transistors having stacked 2D material channel layers and heterogeneous 2D material contacts layers epitaxial to the 2D material channel layers | INTEL CORPORATION (US) | 2026-05-12 | — | — | US | claimed |
| CN-122028479-A | Semiconductor device with engineering gate dielectric stack and preparation method thereof | 赛晶亚太半导体科技(浙江)有限公司 | 2026-05-12 | — | — | CN | claimed |
| US-20260129886-A1 | SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO LTD (KR) | 2026-05-07 | — | — | US | claimed |
| US-20260113968-A1 | NITRIDE SEMICONDUCTOR TRANSISTOR | SUMITOMO ELECTRIC INDUSTRIES (JP) | 2026-04-23 | — | — | US | claimed |
| EP-4730951-A2 | TUNGSTEN GATES FOR NON-PLANAR TRANSISTORS | Sony Group Corporation (JP) | 2026-04-22 | — | — | EP | claimed |
| US-12604484-B2 | Semiconductor device including data storage structure and method of manufacturing data storage structure | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-14 | — | — | US | claimed |
| US-20260090066-A1 | SEMICONDUCTOR DEVICE COMPRISING HIGH-K AMORPHOUS FLUORINATED CARBON THIN FILM GATE DIELECTRIC LAYER AND MANUFACTURING METHOD THEREOF | THE INDUSTRY & ACADEMIC COOPERATION IN CHUNGNAM NATIONAL UNIVERSITY (IAC) (KR) | 2026-03-26 | — | — | US | claimed |
| EP-3857463-B1 | APPLICATIONS OF BACK-END-OF-LINE (BEOL) CAPACITORS IN COMPUTE-IN-MEMORY (CIM) CIRCUITS | INTEL CORP (US) | 2026-03-25 | — | — | EP | claimed |
| US-6696332-B2 | Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing | TEXAS INSTRUMENTS INCORPORATED | 2004-02-24 | — | — | US | claimed |
| US-20030211692-A1 | Method of fabricating trap type nonvolatile memory device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2003-11-13 | — | — | US | claimed |
| US-20030116804-A1 | Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing | TEXAS INSTRUMENTS INCORPORATED | 2003-06-26 | — | — | US | claimed |
| US-6544906-B2 | Annealing of high-k dielectric materials | TEXAS INSTRUMENTS INCORPORATED | 2003-04-08 | — | — | US | claimed |
| US-20020197881-A1 | Method for fabricating a semiconductor structure including a metal oxide interface with silicon | MOTOROLA, INC. | 2002-12-26 | — | — | US | claimed |
| US-20020146895-A1 | Method for fabricating a semiconductor structure including a metal oxide interface with silicon | MOTOROLA, INC. | 2002-10-10 | — | — | US | claimed |
| US-20020081826-A1 | Annealing of high-K dielectric materials | TEXAS INSTRUMENTS INCORPORATED | 2002-06-27 | — | — | US | claimed |
| US-6395650-B1 | Methods for forming metal oxide layers with enhanced purity | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2002-05-28 | — | — | US | claimed |
| CN-1302080-A | Method for producing semiconductor structure with metal oxide interface between silicons | MOTOROLA INC (US) | 2001-07-04 | — | — | CN | claimed |
| EP-1096042-A1 | Method for fabricating a semiconductor structure including a metal oxide interface with silicon | MOTOROLA, INC. (US) | 2001-05-02 | — | — | EP | claimed |