SCHEMBL3400673

SCHEMBL3400673

CC(C)(O)CCOC(=O)c1ccccc1

nearest known ligand 0.62

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.62
TDP1 Q9NUW8 4/20 0.61
MAPK1 P28482 1/20 0.55
HIF1A Q16665 1/20 0.55
TSHR P16473 3/20 0.50
SLC6A3 Q01959 2/20 0.50
KMT2A Q03164 2/20 0.50
SLC6A2 P23975 1/20 0.50
SMN1; SMN2 Q16637 2/20 0.49
HTR1A P08908 1/20 0.49
CYP2D6 P10635 1/20 0.49
SCN1A P35498 1/20 0.49
SCN5A Q14524 1/20 0.49
SCN2A Q99250 1/20 0.49
SCN3A Q9NY46 1/20 0.49
ADRB2 P07550 1/20 0.49
ADRB1 P08588 1/20 0.49
ADRB3 P13945 1/20 0.49
ALDH1A1 P00352 3/20 0.49
HSD17B10 Q99714 1/20 0.49

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21561547 0.90 TDP1 (0.68) LMNATDP1MAPK1HIF1ATSHR
SCHEMBL26413289 0.88 MAPT (0.49) LMNATDP1MAPK1HIF1ATSHR
SCHEMBL6934530 0.87 LMNA (0.65) LMNATDP1MAPK1HIF1ATSHR
SCHEMBL25339994 0.86 LMNA (0.62) LMNATDP1MAPK1HIF1ATSHR
SCHEMBL30829597 0.85 LMNA (0.62) LMNATDP1MAPK1HIF1ATSHR
SCHEMBL21104459 0.84 LMNA (0.61) LMNATDP1MAPK1HIF1ATSHR
SCHEMBL25458881 0.84 LMNA (0.61) LMNATDP1MAPK1HIF1ATSHR
SCHEMBL8351678 0.84 LMNA (0.61) LMNATDP1MAPK1HIF1ATSHR
SCHEMBL11192789 0.83 LMNA (0.56) LMNATDP1MAPK1HIF1ATSHR
SCHEMBL2748818 0.83 LMNA (0.56) LMNATDP1MAPK1HIF1ATSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-108008600-A Radiation-ray sensitive composition 三菱瓦斯化学株式会社 2018-05-08 CN disclosed
CN-107924123-A Photoetching material and its manufacture method, photoetching composition, pattern formation method and, compound, resin and their purification process 学校法人关西大学 2018-04-17 CN disclosed
CN-107533290-A RESIST BASE MATERIAL, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN 三菱瓦斯化学株式会社 2018-01-02 CN disclosed
CN-107428717-A Resist composition, resist pattern forming method, and polyphenol compound used for same 三菱瓦斯化学株式会社 2017-12-01 CN disclosed
CN-107430337-A RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN FORMATION METHOD 三菱瓦斯化学株式会社 2017-12-01 CN disclosed
CN-107407874-A Radiation-sensitive composition, amorphous film and corrosion-resisting pattern forming method 三菱瓦斯化学株式会社 2017-11-28 CN disclosed
CN-106957217-A Polyphenol compound for anti-corrosion agent composition 三菱瓦斯化学株式会社 2017-07-18 CN disclosed
CN-106462059-A Resist material, resist composition, and resist pattern formation method 三菱瓦斯化学株式会社 2017-02-22 CN disclosed
CN-106133604-A Protectant composition and protectant pattern forming method 三菱瓦斯化学株式会社 2016-11-16 CN disclosed
CN-105264440-A Resist composition MITSUBISHI GAS CHEMICAL CO 2016-01-20 CN disclosed
CN-102648173-A Cyclic compound, method for producing same, radiation sensitive composition, and method for forming resist pattern MITSUBISHI GAS CHEMICAL CO 2012-08-22 CN disclosed
CN-102597034-A Cyclic compound, manufacturing method therefor, radiation-sensitive composition, and method for forming a resist pattern MITSUBISHI GAS CHEMICAL CO 2012-07-18 CN disclosed
CN-102596874-A Cyclic compound, method for producing same, radiation-sensitive composition, and method for forming resist pattern MITSUBISHI GAS CHEMICAL CO 2012-07-18 CN disclosed
CN-102498104-A Cyclic compound, process for production of the cyclic compound, radiation-sensitive composition, and method for formation of resist pattern MITSUBISHI GAS CHEMICAL CO 2012-06-13 CN disclosed
US-20100233628-A1 COMPOUND AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-09-16 US disclosed
US-20100233628-A1 COMPOUND AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-09-16 US disclosed
US-20100233628-A1 COMPOUND AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-09-16 US disclosed
CN-1942825-B Resist composition MITSUBISHI GAS CHEMICAL CO 2010-05-12 CN disclosed
CN-101528653-A Radiation-sensitive composition MITSUBISHI GAS CHEMICAL CO (JP) 2009-09-09 CN disclosed
CN-1942825-A Resist composition MITSUBISHI GAS CHEMICAL CO (JP) 2007-04-04 CN disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100233628-A1 COMPOUND AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION HRH3, C9, H1-2 LMNA 2222/4885TDP1 3360/4885MAPK1 1170/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.