Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | RARB | P10826 | 3/20 | 0.45 |
| ▸ | PDK2 | Q15119 | 2/20 | 0.43 |
| ▸ | NR5A1 | Q13285 | 1/20 | 0.42 |
| ▸ | TP53 | P04637 | 2/20 | 0.42 |
| ▸ | TSHR | P16473 | 2/20 | 0.42 |
| ▸ | LTA4H | P09960 | 1/20 | 0.41 |
| ▸ | PTPN11 | Q06124 | 1/20 | 0.41 |
| ▸ | PLA2G4B | P0C869 | 2/20 | 0.41 |
| ▸ | FFAR4 | Q5NUL3 | 1/20 | 0.40 |
| ▸ | NPC1 | O15118 | 1/20 | 0.39 |
| ▸ | LMNA | P02545 | 1/20 | 0.39 |
| ▸ | GAA | P10253 | 1/20 | 0.39 |
| ▸ | MAPT | P10636 | 1/20 | 0.39 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.39 |
| ▸ | RAB9A | P51151 | 1/20 | 0.39 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.39 |
| ▸ | THRA | P10827 | 1/20 | 0.39 |
| ▸ | THRB | P10828 | 1/20 | 0.39 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.38 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3419240 | 0.96 | RARB (0.46) | RARBPDK2NR5A1TP53TSHR | |
| SCHEMBL9333532 | 0.94 | RARB (0.50) | RARBNR5A1TP53TSHRLTA4H | |
| SCHEMBL2437397 | 0.94 | RARB (0.50) | RARBNR5A1TP53TSHRLTA4H | |
| Methane SCHEMBL3419259 | 0.92 | RARB (0.49) | RARBNR5A1TP53TSHRLTA4H | |
| Ethane SCHEMBL3418824 | 0.92 | RARB (0.49) | RARBNR5A1TP53TSHRLTA4H | |
| Trifluoromethanesulfonic Acid SCHEMBL4620136 | 0.89 | RARB (0.45) | RARBPDK2NR5A1TP53TSHR | |
| Trifluoromethanesulfonic Acid SCHEMBL4620193 | 0.89 | RARB (0.45) | RARBPDK2NR5A1TP53TSHR | |
| Trifluoromethanesulfonic Acid SCHEMBL3740925 | 0.89 | RARB (0.45) | RARBPDK2NR5A1TP53TSHR | |
| SCHEMBL3419371 | 0.86 | RARB (0.43) | RARBPDK2NR5A1TP53TSHR | |
| SCHEMBL3416591 | 0.86 | RARB (0.43) | RARBPDK2NR5A1TP53TSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7833693-B2 | Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity | AZ ELECTRONIC MATERIALS USA CORP. | 2010-11-16 | — | — | US | claimed |
| US-20080171270-A1 | Polymers Useful in Photoresist Compositions and Compositions Thereof | AZ ELECTRONIC MATERIALS USA CORP. | 2008-07-17 | — | — | US | claimed |
| US-7390613-B1 | Photoactive compounds | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2008-06-24 | — | — | US | claimed |
| US-20070015084-A1 | Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity | MERCK PATENT GMBH (DE) | 2007-01-18 | — | — | US | claimed |
| US-8455176-B2 | Coating composition | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2013-06-04 | — | — | US | disclosed |
| US-7833693-B2 | Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity | AZ ELECTRONIC MATERIALS USA CORP. | 2010-11-16 | — | — | US | disclosed |
| US-20100119972-A1 | COATING COMPOSITION | MERCK PATENT GMBH (DE) | 2010-05-13 | — | — | US | disclosed |
| US-7521170-B2 | Photoactive compounds | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2009-04-21 | — | — | US | disclosed |
| US-20090087782-A1 | Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity | MERCK PATENT GMBH (DE) | 2009-04-02 | — | — | US | disclosed |
| US-20080187868-A1 | Photoactive Compounds | AZ ELECTRONIC MATERIALS USA CORP. | 2008-08-07 | — | — | US | disclosed |
| US-20080171270-A1 | Polymers Useful in Photoresist Compositions and Compositions Thereof | AZ ELECTRONIC MATERIALS USA CORP. | 2008-07-17 | — | — | US | disclosed |
| US-20070015084-A1 | Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity | MERCK PATENT GMBH (DE) | 2007-01-18 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100119972-A1 | COATING COMPOSITION | S100A9, CAPG, C5 | RARB 2099/4885PDK2 4854/4885NR5A1 2170/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.