Methane

Methane

SCHEMBL3419259

C.CCCCCCCCOc1ccc(-c2cccc(S)c2-c2ccc(OCCCCCCCC)cc2)cc1

nearest known ligand 0.49

Full drug profile on Sugi Atlas →

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RARB P10826 3/20 0.49
NR5A1 Q13285 1/20 0.46
TP53 P04637 2/20 0.46
TSHR P16473 2/20 0.46
LTA4H P09960 1/20 0.45
PLA2G4B P0C869 2/20 0.44
PTPN11 Q06124 1/20 0.44
NPC1 O15118 1/20 0.43
LMNA P02545 1/20 0.43
GAA P10253 1/20 0.43
MAPT P10636 1/20 0.43
ALOX15 P16050 1/20 0.43
RAB9A P51151 1/20 0.43
HSD17B10 Q99714 1/20 0.43
THRA P10827 1/20 0.42
THRB P10828 1/20 0.42
CYP2D6 P10635 2/20 0.42
CYP3A4 P08684 1/20 0.42
CYP1A2 P05177 1/20 0.41
CYP19A1 P11511 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2437397 0.99 RARB (0.50) RARBNR5A1TP53TSHRLTA4H
SCHEMBL9333532 0.99 RARB (0.50) RARBNR5A1TP53TSHRLTA4H
Ethane SCHEMBL3418824 0.97 RARB (0.49) RARBNR5A1TP53TSHRLTA4H
SCHEMBL3419240 0.93 RARB (0.46) RARBNR5A1TP53TSHRLTA4H
SCHEMBL3422015 0.92 RARB (0.45) RARBNR5A1TP53TSHRLTA4H
Trifluoromethanesulfonic Acid SCHEMBL4620193 0.86 RARB (0.45) RARBNR5A1TP53TSHRPLA2G4B
Trifluoromethanesulfonic Acid SCHEMBL3740925 0.86 RARB (0.45) RARBNR5A1TP53TSHRPLA2G4B
Trifluoromethanesulfonic Acid SCHEMBL4620136 0.86 RARB (0.45) RARBNR5A1TP53TSHRPLA2G4B
SCHEMBL29110819 0.85 LTA4H (0.54) RARBNR5A1TP53TSHRLTA4H
SCHEMBL28194312 0.84 LTA4H (0.57) RARBNR5A1TP53TSHRLTA4H

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7833693-B2 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity AZ ELECTRONIC MATERIALS USA CORP. 2010-11-16 US claimed
US-20080171270-A1 Polymers Useful in Photoresist Compositions and Compositions Thereof AZ ELECTRONIC MATERIALS USA CORP. 2008-07-17 US claimed
US-7390613-B1 Photoactive compounds AZ ELECTRONIC MATERIALS USA CORP. (US) 2008-06-24 US claimed
US-20080085463-A1 PHOTOACTIVE COMPOUNDS AZ ELECTRONICS MATERIALS USA CORP. 2008-04-10 US claimed
US-20070015084-A1 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity MERCK PATENT GMBH (DE) 2007-01-18 US claimed
US-8455176-B2 Coating composition AZ ELECTRONIC MATERIALS USA CORP. (US) 2013-06-04 US disclosed
US-7833693-B2 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity AZ ELECTRONIC MATERIALS USA CORP. 2010-11-16 US disclosed
US-20100119972-A1 COATING COMPOSITION MERCK PATENT GMBH (DE) 2010-05-13 US disclosed
US-7547501-B2 Photoactive compounds AZ ELECTRONIC MATERIALS USA CORP. (US) 2009-06-16 US disclosed
US-7521170-B2 Photoactive compounds AZ ELECTRONIC MATERIALS USA CORP. (US) 2009-04-21 US disclosed
US-20090087782-A1 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity MERCK PATENT GMBH (DE) 2009-04-02 US disclosed
US-20080187868-A1 Photoactive Compounds AZ ELECTRONIC MATERIALS USA CORP. 2008-08-07 US disclosed
US-20080171270-A1 Polymers Useful in Photoresist Compositions and Compositions Thereof AZ ELECTRONIC MATERIALS USA CORP. 2008-07-17 US disclosed
US-20080085463-A1 PHOTOACTIVE COMPOUNDS AZ ELECTRONICS MATERIALS USA CORP. 2008-04-10 US disclosed
US-20070015084-A1 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity MERCK PATENT GMBH (DE) 2007-01-18 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100119972-A1 COATING COMPOSITION S100A9, CAPG, C5 RARB 2099/4885NR5A1 2170/4885TP53 3452/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.