⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12912892 | 0.87 | — | — | |
| SCHEMBL20225117 | 0.85 | — | — | |
| SCHEMBL9945871 | 0.81 | TAS1R3 (0.35) | — | |
| SCHEMBL12946115 | 0.81 | TAS1R3 (0.31) | — | |
| SCHEMBL12912878 | 0.80 | — | — | |
| SCHEMBL12180002 | 0.79 | — | — | |
| SCHEMBL12787573 | 0.79 | TAS1R3 (0.30) | — | |
| SCHEMBL22561860 | 0.78 | — | — | |
| SCHEMBL24250416 | 0.77 | TAS1R3 (0.33) | — | |
| SCHEMBL12859001 | 0.77 | TAS1R3 (0.33) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9285679-B2 | Actinic ray-sensitive or radiation-sensitive composition, and resist film, resist-coated mask blanks, resist pattern forming method and photomask each using the composition | FUJIFILM CORPORATION (JP) | 2016-03-15 | — | — | US | disclosed |
| US-9223219-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film | FUJIFILM CORPORATION (JP) | 2015-12-29 | — | — | US | disclosed |
| US-9223208-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-12-29 | — | — | US | disclosed |
| US-8999621-B2 | Pattern forming method, chemical amplification resist composition and resist film | FUJIFILM CORPORATION (JP) | 2015-04-07 | — | — | US | disclosed |
| US-8956802-B2 | Pattern forming method, chemical amplification resist composition and resist film | FUJIFILM CORPORATION (JP) | 2015-02-17 | — | — | US | disclosed |
| US-20150010855-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2015-01-08 | — | — | US | disclosed |
| US-8859192-B2 | Negative pattern forming method and resist pattern | FUJIFILM CORPORATION (JP) | 2014-10-14 | — | — | US | disclosed |
| US-8808965-B2 | Pattern forming method, pattern, chemical amplification resist composition and resist film | FUJIFILM CORPORATION (JP) | 2014-08-19 | — | — | US | disclosed |
| US-20130266777-A1 | NEGATIVE PATTERN FORMING METHOD AND RESIST PATTERN | FUJIFILM CORPORATION (JP) | 2013-10-10 | — | — | US | disclosed |
| US-20130202999-A1 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2013-08-08 | — | — | US | disclosed |
| US-20130171562-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-07-04 | — | — | US | disclosed |
| US-20120322007-A1 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-12-20 | — | — | US | disclosed |
| US-20120288691-A1 | PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-11-15 | — | — | US | disclosed |
| US-20120282548-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-11-08 | — | — | US | disclosed |
| US-20120148957-A1 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-06-14 | — | — | US | disclosed |
| US-20120094235-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-04-19 | — | — | US | disclosed |