⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2119594 | 0.87 | — | — | |
| Charcoal, Activated SCHEMBL30928986 | 0.87 | — | — | |
| SCHEMBL61894 | 0.87 | — | — | |
| Arsenic SCHEMBL347971 | 0.75 | — | — | |
| SCHEMBL3746078 | 0.75 | — | — | |
| SCHEMBL3279160 | 0.75 | — | — | |
| SCHEMBL9898240 | 0.75 | — | — | |
| SCHEMBL9898340 | 0.75 | — | — | |
| SCHEMBL1205976 | 0.75 | — | — | |
| SCHEMBL1204245 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11917930-B2 | Resistance change device and storage device | KIOXIA CORPORATION (JP) | 2024-02-27 | — | — | US | claimed |
| US-20220302385-A1 | RESISTANCE CHANGE DEVICE AND STORAGE DEVICE | KIOXIA CORPORATION (JP) | 2022-09-22 | — | — | US | claimed |
| US-11917930-B2 | Resistance change device and storage device | KIOXIA CORPORATION (JP) | 2024-02-27 | — | — | US | disclosed |
| US-20220302385-A1 | RESISTANCE CHANGE DEVICE AND STORAGE DEVICE | KIOXIA CORPORATION (JP) | 2022-09-22 | — | — | US | disclosed |
| CN-110459243-B | Multilevel phase change memory using second harmonic as read-write mode and preparation method thereof | 中国科学院上海光学精密机械研究所 | 2021-02-02 | — | — | CN | disclosed |
| CN-111725396-A | Graphene-phase change material structure, memory unit and preparation method thereof | 中国科学院上海微系统与信息技术研究所 | 2020-09-29 | — | — | CN | disclosed |
| US-7807497-B2 | Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2010-10-05 | — | — | US | disclosed |
| US-20080017841-A1 | Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices | SAMSUNG ELECTRONICS CO., LTD. | 2008-01-24 | — | — | US | disclosed |