SCHEMBL3450824

SCHEMBL3450824

CCC(Nc1ccccc1)[Si](C)(OC)OC

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 3/20 0.41
ALDH1A1 P00352 5/20 0.36
CYP3A4 P08684 3/20 0.36
ALOX15 P16050 3/20 0.36
TSHR P16473 3/20 0.36
HSD17B10 Q99714 3/20 0.36
THRB P10828 2/20 0.36
L3MBTL1 Q9Y468 2/20 0.36
ALOX12 P18054 2/20 0.36
LMNA P02545 1/20 0.36
RECQL P46063 1/20 0.36
ATM Q13315 1/20 0.36
GAA P10253 2/20 0.36
HIF1A Q16665 2/20 0.35
TP53 P04637 1/20 0.35
HSP90AA1 P07900 1/20 0.35
CASP1 P29466 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
MAPK1 P28482 1/20 0.35
MAPT P10636 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29055866 0.86 TDP1 (0.38) TDP1ALDH1A1CYP3A4ALOX15TSHR
SCHEMBL3450244 0.84 TDP1 (0.39) TDP1ALDH1A1CYP3A4ALOX15TSHR
SCHEMBL125182 0.84 TDP1 (0.42) TDP1ALDH1A1CYP3A4ALOX15TSHR
SCHEMBL2445733 0.84 TDP1 (0.42) TDP1ALDH1A1CYP3A4ALOX15TSHR
SCHEMBL28492953 0.81 TDP1 (0.46) TDP1ALDH1A1CYP3A4ALOX15TSHR
SCHEMBL9069335 0.81 TDP1 (0.39) TDP1ALDH1A1CYP3A4ALOX15TSHR
SCHEMBL10943391 0.78 TDP1 (0.37) TDP1ALDH1A1CYP3A4ALOX15TSHR
SCHEMBL1136012 0.77 TDP1 (0.39) TDP1ALDH1A1CYP3A4ALOX15TSHR
SCHEMBL16147719 0.77 TDP1 (0.36) TDP1ALDH1A1CYP3A4ALOX15TSHR
SCHEMBL19579594 0.76 TDP1 (0.35) TDP1ALDH1A1CYP3A4ALOX15TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118056271-A Method for manufacturing semiconductor device, temporary fixing material and application of temporary fixing material in manufacturing semiconductor device 株式会社力森诺科 2024-05-17 CN disclosed
CN-118043332-A Method for producing cyclic silazane compound 信越化学工业株式会社 2024-05-14 CN disclosed
CN-112513217-B Adhesive composition, film-like adhesive, adhesive sheet, and method for manufacturing semiconductor device 株式会社力森诺科 2023-07-14 CN disclosed
US-20130172459-A1 PROCESS FOR PRODUCING COMPATIBILIZED RESIN, THERMOSETTING RESIN COMPOSITION, PREPREG, AND LAMINATE HITACHI CHEMICAL COMPANY, LTD. (JP) 2013-07-04 US disclosed
EP-1907517-B1 AMINE TUNGSTATES AND DIARYLAMINES IN LUBRICANT COMPOSITIONS KING INDUSTRIES INC (US) 2012-12-05 EP disclosed
US-8080500-B2 Amine tungstates and lubricant compositions KING INDUSTRIES, INC. (US) 2011-12-20 US disclosed
US-7820602-B2 Amine tungstates and lubricant compositions KING INDUSTRIES, INC. (US) 2010-10-26 US disclosed
US-20090029888-A1 AMINE TUNGSTATES AND LUBRICANT COMPOSITIONS KING INDUSTRIES, INC. 2009-01-29 US disclosed
EP-1418021-B1 Polishing pad JSR CORP (JP) 2009-01-21 EP disclosed
US-20080194440-A1 AMINE TUNGSTATES AND LUBRICANT COMPOSITIONS RAVICHANDRAN RAMANATHAN 2008-08-14 US disclosed
EP-1907517-A2 AMINE TUNGSTATES AND LUBRICANT COMPOSITIONS King Industries, Inc. (US) 2008-04-09 EP disclosed
US-20070042917-A1 Amine Tungstates and Lubricant Compositions KING INDUSTRIES, INC. 2007-02-22 US disclosed
WO-2007009022-A2 AMINE TUNGSTATES AND LUBRICANT COMPOSITIONS KING INDUSTRIES, INC. (US) 2007-01-18 WO disclosed
US-6992123-B2 Polishing pad JSR CORPORATION (JP) 2006-01-31 US disclosed
US-20040118051-A1 Polishing pad JSR CORPORATION (JP) 2004-06-24 US disclosed
EP-1418021-A1 Polishing pad JSR Corporation (JP) 2004-05-12 EP disclosed