⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7165058 | 0.82 | — | — | |
| SCHEMBL29610084 | 0.82 | — | — | |
| SCHEMBL271946 | 0.82 | — | — | |
| SCHEMBL5041251 | 0.82 | — | — | |
| SCHEMBL16303 | 0.82 | — | — | |
| SCHEMBL16594173 | 0.82 | — | — | |
| SCHEMBL8201124 | 0.82 | — | — | |
| SCHEMBL2180089 | 0.82 | — | — | |
| SCHEMBL7903268 | 0.82 | — | — | |
| SCHEMBL5022891 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20170117142-A1 | Organic Germanium Amine Compound and Method for Depositing Thin Film Using the Same | EUGENE TECHNOLOGY MATERIALS CO., LTD. (KR) | 2017-04-27 | — | — | US | claimed |
| CN-106103456-A | Organic germanium amines and the method with its deposition thin film | 株式会社Eugene科技材料 | 2016-11-09 | — | — | CN | claimed |
| US-8680629-B2 | Control of flatband voltages and threshold voltages in high-k metal gate stacks and structures for CMOS devices | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2014-03-25 | — | — | US | claimed |
| US-20240055259-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS | Kokusai Electric Corporation (JP) | 2024-02-15 | — | — | US | disclosed |
| CN-114038800-A | Method for manufacturing semiconductor structure | 台湾积体电路制造股份有限公司 | 2022-02-11 | — | — | CN | disclosed |
| CN-113823597-A | Method for manufacturing semiconductor device | 台湾积体电路制造股份有限公司 | 2021-12-21 | — | — | CN | disclosed |
| US-20210242023-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS | Kokusai Electric Corporation (JP) | 2021-08-05 | — | — | US | disclosed |
| CN-109309054-B | Semiconductor structure and forming method thereof | 中芯国际集成电路制造(北京)有限公司 | 2020-12-22 | — | — | CN | disclosed |
| US-20170117142-A1 | Organic Germanium Amine Compound and Method for Depositing Thin Film Using the Same | EUGENE TECHNOLOGY MATERIALS CO., LTD. (KR) | 2017-04-27 | — | — | US | disclosed |
| CN-106103456-A | Organic germanium amines and the method with its deposition thin film | 株式会社Eugene科技材料 | 2016-11-09 | — | — | CN | disclosed |
| US-8748991-B2 | Control of flatband voltages and threshold voltages in high-k metal gate stacks and structures for CMOS devices | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2014-06-10 | — | — | US | disclosed |
| US-8680629-B2 | Control of flatband voltages and threshold voltages in high-k metal gate stacks and structures for CMOS devices | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2014-03-25 | — | — | US | disclosed |
| US-20120286338-A1 | CONTROL OF FLATBAND VOLTAGES AND THRESHOLD VOLTAGES IN HIGH-K METAL GATE STACKS AND STRUCTURES FOR CMOS DEVICES | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-11-15 | — | — | US | disclosed |
| US-20100308412-A1 | CONTROL OF FLATBAND VOLTAGES AND THRESHOLD VOLTAGES IN HIGH-K METAL GATE STACKS AND STRUCTURES FOR CMOS DEVICES | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2010-12-09 | — | — | US | disclosed |