Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ADRB2 | P07550 | 1/20 | 0.31 |
| ▸ | ADRB1 | P08588 | 1/20 | 0.31 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3482246 | 0.95 | ADRB2 (0.31) | ADRB2ADRB1ADRB3 | |
| SCHEMBL705901 | 0.92 | — | — | |
| SCHEMBL705856 | 0.92 | — | — | |
| SCHEMBL5575134 | 0.91 | THRB (0.36) | — | |
| SCHEMBL5574628 | 0.91 | THRB (0.36) | — | |
| SCHEMBL3481755 | 0.91 | — | — | |
| SCHEMBL703678 | 0.90 | ADRB2 (0.33) | ADRB2ADRB1ADRB3 | |
| SCHEMBL704529 | 0.87 | ADRB2 (0.32) | ADRB2ADRB1ADRB3 | |
| SCHEMBL708161 | 0.87 | ADRB2 (0.32) | ADRB2ADRB1ADRB3 | |
| SCHEMBL704549 | 0.87 | ADRB2 (0.32) | ADRB2ADRB1ADRB3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| US-7169327-B2 | Composite particle for dielectrics, ultramicroparticulate composite resin particle, composition for forming dielectrics and use thereof | JSR CORPORATION (JP) | 2007-01-30 | — | — | US | disclosed |
| US-6956076-B2 | Inorganic particle-containing composition, transfer film comprising the same and plasma display panel production process | JSR CORPORATION (JP) | 2005-10-18 | — | — | US | disclosed |
| EP-1566368-A2 | Glass powder-containing resin composition, transfer film and process for manufacturing a plasma display panel comprising the transfer film | JSR Corporation (JP) | 2005-08-24 | — | — | EP | disclosed |
| EP-1003199-B1 | Inorganic particle-containing composition, transfer film comprising the same and plasma display panel production process | JSR CORP (JP) | 2004-05-12 | — | — | EP | disclosed |
| EP-1387367-A1 | COMPOSITE PARTICLE FOR DIELECTRICS, ULTRAMICROPARTICULATE COMPOSITE RESIN PARTICLE, COMPOSITION FOR FORMING DIELECTRICS AND USE THEREOF | JSR Corporation (JP) | 2004-02-04 | — | — | EP | disclosed |
| CN-1455933-A | Composite particle for dielectrics, ultramicro particulate composite resin particle, composition for forming dielectrics and use thereof | JSR CORP (JP) | 2003-11-12 | — | — | CN | disclosed |
| US-20030151032-A1 | Composite particle for dielectrics, ultramicroparticulate composite resin particle, composition for forming dielectrics and use thereof | JSR CORPORATION (JP) | 2003-08-14 | — | — | US | disclosed |
| US-6548582-B2 | Inorganic particles, binder resin and at least one plasticizer selected from dialk(en)yl ester of alkanedioic acids, or alkoxyalkylylated esters therof, or 1,2-propanediol 1-alkanoates; flexibility | JSR CORPORATION (JP) | 2003-04-15 | — | — | US | disclosed |
| EP-0877003-B1 | Glass paste composition | JSR CORP (JP) | 2002-09-18 | — | — | EP | disclosed |
| US-20020035183-A1 | Inorgaic particle-containing composition, transfer film comprising the same and plasma display panel production process | JSR CORPORATION (JP) | 2002-03-21 | — | — | US | disclosed |
| US-20020016401-A1 | Inorganic particle-containing composition, transfer film comprising the same and plasma display panel production process | JSR CORPORATION (JP) | 2002-02-07 | — | — | US | disclosed |
| US-6339118-B1 | FOR FORMING BARRIER, ELECTRODE, RESISTOR, DIELECTRIC LAYER, PHOSPHOR, COLOR FILTER OR BLACK MATRIX OF PLASMA DISPLAY PANEL | JSR CORPORATION (JP) | 2002-01-15 | — | — | US | disclosed |
| EP-1003199-A2 | Inorganic particle-containing composition, transfer film comprising the same and plasma display panel production process | JSR Corporation (JP) | 2000-05-24 | — | — | EP | disclosed |
| US-6046121-A | MIXTURE COMPRISING GLASS POWDER, HYDROPHILIC ACRYLATE POLYMER BINDER RESIN IN A NONAQUEOUS SOLVENT HAVING BOILING POINT BETWEEN 100 AND 200 DEGREES C., AND A LOW VAPOR PRESSURE | JSR CORPORATION (JP) | 2000-04-04 | — | — | US | disclosed |
| EP-0987228-A2 | Glass paste composition, and transfer film and plasma display panel comprising the same | JSR Corporation (JP) | 2000-03-22 | — | — | EP | disclosed |
| EP-0877003-A2 | Glass paste composition | JSR Corporation (JP) | 1998-11-11 | — | — | EP | disclosed |