Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NR1H2 | P55055 | 2/20 | 0.37 |
| ▸ | NR1H3 | Q13133 | 2/20 | 0.37 |
| ▸ | ESR1 | P03372 | 1/20 | 0.35 |
| ▸ | ESR2 | Q92731 | 1/20 | 0.35 |
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | IDO1 | P14902 | 2/20 | 0.31 |
| ▸ | TDO2 | P48775 | 2/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15736000 | 0.74 | NR1H2 (0.35) | NR1H2NR1H3ESR1ESR2 | |
| SCHEMBL1359992 | 0.73 | NR1H2 (0.31) | NR1H2NR1H3 | |
| SCHEMBL5569284 | 0.69 | NR1H2 (0.40) | NR1H2NR1H3ESR1ESR2TSHR | |
| SCHEMBL15734891 | 0.69 | NR1H2 (0.40) | NR1H2NR1H3 | |
| SCHEMBL15736834 | 0.68 | NR1H2 (0.30) | NR1H2NR1H3 | |
| SCHEMBL3271165 | 0.68 | ESR1 (0.39) | NR1H2NR1H3ESR1ESR2TSHR | |
| SCHEMBL15734840 | 0.67 | IDO1 (0.30) | IDO1TDO2 | |
| SCHEMBL15735091 | 0.67 | IDO1 (0.30) | IDO1TDO2 | |
| SCHEMBL3482029 | 0.67 | NR1H2 (0.46) | NR1H2NR1H3ESR1ESR2TSHR | |
| SCHEMBL15734926 | 0.67 | NR1H2 (0.35) | NR1H2NR1H3ESR1ESR2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10727410-B2 | Surface modifier for transparent oxide electrode, surface-modified transparent oxide electrode, and method for producing surface-modified transparent oxide electrode | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-07-28 | — | — | US | disclosed |
| US-9947871-B2 | Surface modifier for metal electrode, surface-modified metal electrode, and method for producing surface-modified metal electrode | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-04-17 | — | — | US | disclosed |
| US-20150295176-A1 | SURFACE MODIFIER FOR METAL ELECTRODE, SURFACE-MODIFIED METAL ELECTRODE, AND METHOD FOR PRODUCING SURFACE-MODIFIED METAL ELECTRODE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-10-15 | — | — | US | disclosed |
| EP-2927936-A1 | SURFACE MODIFYING AGENT FOR METAL ELECTRODES, SURFACE-MODIFIED METAL ELECTRODE, AND METHOD FOR PRODUCING SURFACE-MODIFIED METAL ELECTRODE | Shin-Etsu Chemical Co., Ltd. (JP) | 2015-10-07 | — | — | EP | disclosed |
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| EP-2738230-A1 | Surface modifier for transparent oxide electrode, surface-modified transparent oxide electrode, and method for producing surface-modified transparent oxide electrode | Shin-Etsu Chemical Co., Ltd. (JP) | 2014-06-04 | — | — | EP | disclosed |
| US-20140147628-A1 | Surface Modifier For Transparent Oxide Electrode, Surface-Modified Transparent Oxide Electrode, And Method For Producing Surface-Modified Transparent Oxide Electrode | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-05-29 | — | — | US | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| CN-101641767-B | Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device | FUJITSU LTD | 2013-10-30 | — | — | CN | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |