SCHEMBL3481625

SCHEMBL3481625

CCO[Si](C)(CC)c1ccccc1

nearest known ligand 0.34

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 1/20 0.34
ESR2 Q92731 1/20 0.34
TP53 P04637 2/20 0.33
KDM4E B2RXH2 1/20 0.33
NPC1 O15118 1/20 0.33
ALDH1A1 P00352 1/20 0.33
HPGD P15428 1/20 0.33
RAB9A P51151 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
TSHR P16473 1/20 0.33
LTA4H P09960 1/20 0.33
ELANE P08246 1/20 0.32
MAPT P10636 1/20 0.32
RELA Q04206 1/20 0.31
NPSR1 Q6W5P4 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6116111 0.89 ESR1 (0.34) ESR1
SCHEMBL3482587 0.83 LMNA (0.36) ESR1ESR2TP53ALDH1A1HPGD
SCHEMBL13089129 0.83 ESR1 (0.32) ESR1ESR2TP53KDM4ENPC1
SCHEMBL3482722 0.83 ESR1 (0.32) ESR1ESR2TP53KDM4ENPC1
SCHEMBL10942685 0.83 ESR1 (0.32) ESR1ESR2TP53KDM4ENPC1
SCHEMBL18328935 0.83
SCHEMBL13089521 0.83
SCHEMBL15249587 0.82 ESR1 (0.37) ESR1ESR2TP53KDM4ENPC1
SCHEMBL19130352 0.82 ESR1 (0.31) ESR1ESR2TP53KDM4ENPC1
SCHEMBL19130399 0.82 ESR1 (0.31) ESR1ESR2TP53KDM4ENPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109438633-A A kind of organosilicon toughener and its synthetic method with anti-drop effect 广东优科艾迪高分子材料有限公司 2019-03-08 CN disclosed
CN-109337025-A A kind of anti-dripping agent and its synthetic method with toughening effect 广东优科艾迪高分子材料有限公司 2019-02-15 CN disclosed
CN-109320674-A A kind of anti-dripping agent and preparation method thereof containing PTFE and organosilicon 广东优科艾迪高分子材料有限公司 2019-02-12 CN disclosed
CN-109320937-A A kind of organic silicon fibre retardant and preparation method thereof based on poroid inorganic matter 铨盛(云浮)新型聚合物有限公司 2019-02-12 CN disclosed
CN-109320772-A A kind of anti-dripping agent and preparation method thereof containing organosilicon and inorganic silicon 广东优科艾迪高分子材料有限公司 2019-02-12 CN disclosed
CN-109306169-A A kind of hydridization organic matter and the organic silicon fibre retardant of nano silica and preparation method thereof 铨盛(云浮)新型聚合物有限公司 2019-02-05 CN disclosed
CN-109293853-A A kind of organic silicon fibre retardant and preparation method thereof containing epoxy group 铨盛聚碳科技股份有限公司 2019-02-01 CN disclosed
CN-109293856-A A kind of the organosilicon toughener and its synthetic method of polymer overmold nano-inorganic substance 铨盛聚碳科技股份有限公司 2019-02-01 CN disclosed
CN-109233160-A A kind of organic silicon fibre retardant and preparation method thereof containing PTFE and nano silica 铨盛聚碳科技股份有限公司 2019-01-18 CN disclosed
US-9546237-B2 Stabilization of polymers that contain a hydrolyzable functionality BRIDGESTONE CORPORATION (JP) 2017-01-17 US disclosed
US-9035446-B2 Power module FUJI ELECTRIC CO., LTD. (JP) 2015-05-19 US disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-20140319669-A1 POWER MODULE FUJI ELECTRIC CO., LTD. (JP) 2014-10-30 US disclosed
US-20140319669-A1 POWER MODULE FUJI ELECTRIC CO., LTD. (JP) 2014-10-30 US disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20130331520-A1 STABILIZATION OF POLYMERS THAT CONTAIN A HYDROLYZABLE FUNCTIONALITY BRIDGESTONE CORPORATION (JP) 2013-12-12 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-20090108488-A1 Process for Production of Hybrid Polymeric Material KANEKA CORPORATION (JP) 2009-04-30 US disclosed
EP-0129834-A2 Photo and radiation-sensitive organopolymeric material HITACHI, LTD. (JP) 1985-01-02 EP disclosed