SCHEMBL3482722

SCHEMBL3482722

CCC[Si](C)(OCC)c1ccccc1

nearest known ligand 0.32

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 1/20 0.32
ESR2 Q92731 1/20 0.32
TP53 P04637 2/20 0.32
KDM4E B2RXH2 1/20 0.32
NPC1 O15118 1/20 0.32
ALDH1A1 P00352 1/20 0.32
HPGD P15428 1/20 0.32
RAB9A P51151 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
TSHR P16473 1/20 0.32
LTA4H P09960 1/20 0.31
ELANE P08246 1/20 0.30
MAPT P10636 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482105 0.89 LTA4H (0.35) ESR1ESR2ALDH1A1TSHRLTA4H
SCHEMBL3481608 0.86 LMNA (0.35) ESR1ESR2TP53ALDH1A1HPGD
SCHEMBL13089511 0.86 ESR1 (0.31) ESR1ESR2TP53KDM4ENPC1
SCHEMBL19125203 0.85 ESR1 (0.31) ESR1ESR2TP53KDM4ENPC1
SCHEMBL12680254 0.83 ESR1 (0.34) ESR1ESR2TP53KDM4ENPC1
SCHEMBL3481625 0.83 ESR1 (0.34) ESR1ESR2TP53KDM4ENPC1
SCHEMBL13089521 0.83
SCHEMBL3481489 0.82 ESR1 (0.33) ESR1ESR2TP53KDM4EALDH1A1
SCHEMBL14956878 0.80 MEN1 (0.31)
SCHEMBL10942685 0.80 ESR1 (0.32) ESR1ESR2TP53KDM4ENPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109438633-A A kind of organosilicon toughener and its synthetic method with anti-drop effect 广东优科艾迪高分子材料有限公司 2019-03-08 CN disclosed
CN-109337025-A A kind of anti-dripping agent and its synthetic method with toughening effect 广东优科艾迪高分子材料有限公司 2019-02-15 CN disclosed
CN-109320937-A A kind of organic silicon fibre retardant and preparation method thereof based on poroid inorganic matter 铨盛(云浮)新型聚合物有限公司 2019-02-12 CN disclosed
CN-109320674-A A kind of anti-dripping agent and preparation method thereof containing PTFE and organosilicon 广东优科艾迪高分子材料有限公司 2019-02-12 CN disclosed
CN-109320772-A A kind of anti-dripping agent and preparation method thereof containing organosilicon and inorganic silicon 广东优科艾迪高分子材料有限公司 2019-02-12 CN disclosed
CN-109306169-A A kind of hydridization organic matter and the organic silicon fibre retardant of nano silica and preparation method thereof 铨盛(云浮)新型聚合物有限公司 2019-02-05 CN disclosed
CN-109293853-A A kind of organic silicon fibre retardant and preparation method thereof containing epoxy group 铨盛聚碳科技股份有限公司 2019-02-01 CN disclosed
CN-109293856-A A kind of the organosilicon toughener and its synthetic method of polymer overmold nano-inorganic substance 铨盛聚碳科技股份有限公司 2019-02-01 CN disclosed
CN-109233160-A A kind of organic silicon fibre retardant and preparation method thereof containing PTFE and nano silica 铨盛聚碳科技股份有限公司 2019-01-18 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed