SCHEMBL3481676

SCHEMBL3481676

CCO[Si](C)(C)CC(C)C

nearest known ligand 0.30

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4813903 0.79 OPRM1 (0.33)
SCHEMBL3481780 0.79 HSD17B10 (0.31)
SCHEMBL12677620 0.79
SCHEMBL1585586 0.79
SCHEMBL13324280 0.79
SCHEMBL16497577 0.78 LMNA (0.30) LMNA
SCHEMBL825955 0.78 LMNA (0.30) LMNA
SCHEMBL1781373 0.76
SCHEMBL9662971 0.76
SCHEMBL16714758 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-113024725-A Curable composition, cured product, (meth) acrylic resin, and compound 东京应化工业株式会社 2021-06-25 CN disclosed
CN-113031399-A Resin composition, cured product, and siloxane-modified (meth) acrylic resin 东京应化工业株式会社 2021-06-25 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-5122490-A Composed of organomagesium compounds, titanium and vanadium halides, alcohols, halogenated silanes, siloxanes, borates, electron donors and cyclic ether CHISSO CORPORATION (JP) 1992-06-16 US disclosed