SCHEMBL3481685

SCHEMBL3481685

CCCC[SiH](C)OCc1ccccc1

nearest known ligand 0.45

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
CETP P11597 3/20 0.41
TSHR P16473 2/20 0.41
ALDH1A1 P00352 2/20 0.41
CYP3A4 P08684 1/20 0.41
MAPK1 P28482 1/20 0.41
TDP1 Q9NUW8 1/20 0.41
L3MBTL1 Q9Y468 1/20 0.41
IDO1 P14902 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.37
SIGMAR1 Q99720 1/20 0.37
TP53 P04637 1/20 0.37
AGXT P21549 1/20 0.36
AR P10275 1/20 0.36
DNM1 Q05193 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481498 0.89 TSHR (0.43) CETPTSHRALDH1A1CYP3A4MAPK1
SCHEMBL28617298 0.84 ESR1 (0.47) TSHRALDH1A1CYP3A4MAPK1IDO1
SCHEMBL706931 0.83 CETP (0.42) CETPTSHRALDH1A1CYP3A4MAPK1
SCHEMBL3482122 0.82 SIGMAR1 (0.42) CETPIDO1SIGMAR1
SCHEMBL3482262 0.81 IDO1 (0.46) IDO1SIGMAR1
SCHEMBL10568560 0.80 TSHR (0.46) TSHRALDH1A1MAPK1TDP1L3MBTL1
SCHEMBL3481604 0.80 CETP (0.41) CETPTSHRALDH1A1CYP3A4MAPK1
SCHEMBL27806779 0.79 TSHR (0.41) TSHRALDH1A1MAPK1TDP1L3MBTL1
SCHEMBL27614298 0.79 CETP (0.40) CETPTSHRALDH1A1CYP3A4MAPK1
SCHEMBL703243 0.75 TSHR (0.44) CETPTSHRALDH1A1CYP3A4MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed