⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3482922 | 0.86 | — | — | |
| SCHEMBL4275371 | 0.82 | ADRB2 (0.39) | — | |
| SCHEMBL3481607 | 0.82 | — | — | |
| SCHEMBL3482255 | 0.79 | — | — | |
| SCHEMBL23701045 | 0.75 | — | — | |
| SCHEMBL1608023 | 0.75 | — | — | |
| SCHEMBL3482559 | 0.75 | — | — | |
| SCHEMBL25327708 | 0.75 | CA1 (0.32) | — | |
| SCHEMBL702802 | 0.75 | ADRB2 (0.32) | — | |
| SCHEMBL106329 | 0.73 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20220301862-A1 | MONOALKOXYSILANES AND DENSE ORGANOSILICA FILMS MADE THEREFROM | VERSUM MATERIALS US, LLC (US) | 2022-09-22 | — | — | US | claimed |
| EP-4018013-A1 | MONOALKOXYSILANES AND DENSE ORGANOSILICA FILMS MADE THEREFROM | Versum Materials US, LLC (US) | 2022-06-29 | — | — | EP | claimed |
| CN-114616652-A | Monoalkoxysilanes and dense organosilica films prepared therefrom | 弗萨姆材料美国有限责任公司 | 2022-06-10 | — | — | CN | claimed |
| WO-2021050659-A1 | MONOALKOXYSILANES AND DENSE ORGANOSILICA FILMS MADE THEREFROM | VERSUM MATERIALS US, LLC (US) | 2021-03-18 | — | — | WO | claimed |
| WO-2010082710-A1 | METHOD FOR PREPARING A HIGHLY DURABLE REVERSE OSMOSIS MEMBRANE | UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY (KR) | 2010-07-22 | — | — | WO | claimed |
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| WO-2010082710-A1 | METHOD FOR PREPARING A HIGHLY DURABLE REVERSE OSMOSIS MEMBRANE | UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY (KR) | 2010-07-22 | — | — | WO | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| US-7604866-B2 | Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2009-10-20 | — | — | US | disclosed |
| US-20060269724-A1 | Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2006-11-30 | — | — | US | disclosed |
| US-20040077757-A1 | Coating composition for use in producing an insulating thin film | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2004-04-22 | — | — | US | disclosed |