SCHEMBL3481807

SCHEMBL3481807

CCO[Si](C)(C)c1ccc(C)cc1

nearest known ligand 0.36

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
ACHE P22303 2/20 0.36
TDP1 Q9NUW8 1/20 0.36
TARBP2 Q15633 1/20 0.33
AGXT P21549 2/20 0.32
MEN1 O00255 1/20 0.31
KMT2A Q03164 1/20 0.31
NPC1 O15118 2/20 0.31
RAB9A P51151 2/20 0.31
SMN1; SMN2 Q16637 2/20 0.31
IDO1 P14902 1/20 0.31
TSHR P16473 1/20 0.31
KDM4E B2RXH2 2/20 0.31
GAA P10253 1/20 0.31
HTT P42858 1/20 0.31
ALDH1A1 P00352 1/20 0.31
TP53 P04637 1/20 0.31
HSD17B10 Q99714 1/20 0.31
MAPT P10636 1/20 0.30
DHODH Q02127 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704583 0.91 NQO1 (0.33)
SCHEMBL6749512 0.90 ALDH1A1 (0.35) MEN1KMT2ARAB9ATSHRALDH1A1
SCHEMBL6746764 0.90 ALDH1A1 (0.35) MEN1KMT2ARAB9ATSHRALDH1A1
SCHEMBL6748520 0.86 TARBP2 (0.33) TARBP2KMT2ANPC1RAB9ASMN1; SMN2
SCHEMBL6745103 0.84 CYP2C19 (0.39) TDP1MEN1KMT2ANPC1RAB9A
SCHEMBL6745055 0.84 CYP2C19 (0.39) TDP1MEN1KMT2ANPC1RAB9A
SCHEMBL6749553 0.84 CYP2C19 (0.39) TDP1MEN1KMT2ANPC1RAB9A
SCHEMBL6748591 0.84 CYP2C19 (0.39) TDP1MEN1KMT2ANPC1RAB9A
SCHEMBL6746704 0.84 CYP2C19 (0.39) TDP1MEN1KMT2ANPC1RAB9A
SCHEMBL17167774 0.84 NR1H2 (0.34)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-107076894-B Infrared shielding composition, cured film, and solid-state imaging device JSR株式会社 2020-01-31 CN disclosed
CN-107076894-A Infrared shielding composition, cured film, and solid-state imaging device JSR株式会社 2017-08-18 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed