SCHEMBL3481816

SCHEMBL3481816

CCC(Cc1ccccc1)(Cc1ccccc1)O[SiH3]

nearest known ligand 0.43

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
TAAR1 Q96RJ0 2/20 0.43
SLC6A2 P23975 1/20 0.43
TP53 P04637 1/20 0.41
LMNA P02545 1/20 0.41
CYP2D6 P10635 1/20 0.41
CTSK P43235 2/20 0.40
CTSL P07711 1/20 0.40
CTSB P07858 1/20 0.40
CYP1A2 P05177 1/20 0.38
CYP2C9 P11712 1/20 0.38
CYP2C19 P33261 1/20 0.38
TRPA1 O75762 2/20 0.36
ALDH1A1 P00352 1/20 0.36
RECQL P46063 1/20 0.36
MMP8 P22894 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.35
HIF1A Q16665 1/20 0.35
TSHR P16473 1/20 0.34
FDPS P14324 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1501365 0.96 TAAR1 (0.43) TAAR1SLC6A2TP53LMNACYP2D6
SCHEMBL3341644 0.87 SLC6A2 (0.44) TAAR1SLC6A2TP53LMNACYP2D6
SCHEMBL4275230 0.84 TAAR1 (0.41) TAAR1SLC6A2TP53LMNACYP2D6
SCHEMBL14587075 0.81 TAAR1 (0.45) TAAR1SLC6A2TP53LMNACYP2D6
SCHEMBL1501497 0.80 TP53 (0.38) TAAR1SLC6A2TP53ALDH1A1SMN1; SMN2
SCHEMBL3338289 0.78 MAOB (0.39) TAAR1SLC6A2LMNACYP2D6CYP1A2
SCHEMBL15734211 0.76 TAAR1 (0.38) TAAR1LMNACYP2D6CYP1A2CYP2C19
SCHEMBL7273150 0.76 CTSK (0.41) TAAR1SLC6A2TP53LMNACYP2D6
SCHEMBL7273144 0.75 CTSK (0.43) TAAR1SLC6A2TP53LMNACYP2D6
SCHEMBL7622713 0.75 CYP1A2 (0.42) TAAR1SLC6A2TP53LMNACYP2D6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed