SCHEMBL3341644

SCHEMBL3341644

[SiH3]OC(Cc1ccccc1)(Cc1ccccc1)Cc1ccccc1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SLC6A2 P23975 1/20 0.44
TAAR1 Q96RJ0 1/20 0.44
CYP1A2 P05177 1/20 0.43
CYP2C9 P11712 1/20 0.43
CYP2C19 P33261 1/20 0.43
LMNA P02545 1/20 0.41
CYP2D6 P10635 1/20 0.41
TSHR P16473 3/20 0.40
SMN1; SMN2 Q16637 1/20 0.40
HIF1A Q16665 1/20 0.40
CALM1 P0DP23 1/20 0.39
FDPS P14324 1/20 0.39
IDO1 P14902 2/20 0.37
TRPA1 O75762 2/20 0.36
TP53 P04637 1/20 0.36
LOXL2 Q9Y4K0 1/20 0.36
ALDH1A1 P00352 1/20 0.36
MAOB P27338 2/20 0.36
MAOA P21397 1/20 0.36
AGXT P21549 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481816 0.87 TAAR1 (0.43) SLC6A2TAAR1CYP1A2CYP2C9CYP2C19
SCHEMBL1501365 0.87 TAAR1 (0.43) SLC6A2TAAR1CYP1A2CYP2C9CYP2C19
SCHEMBL3338289 0.85 MAOB (0.39) SLC6A2TAAR1CYP1A2CYP2C9CYP2C19
SCHEMBL4275230 0.83 TAAR1 (0.41) SLC6A2TAAR1CYP1A2CYP2C9CYP2C19
SCHEMBL15302017 0.82 ALDH1A1 (0.37) SLC6A2TAAR1CYP1A2CYP2C9CYP2C19
SCHEMBL15302770 0.82 ALDH1A1 (0.37) SLC6A2TAAR1CYP1A2CYP2C9CYP2C19
SCHEMBL11044567 0.79 SLC6A2 (0.48) SLC6A2TAAR1CYP1A2CYP2C9CYP2C19
SCHEMBL313697 0.76 SLC6A2 (0.52) SLC6A2TAAR1CYP1A2CYP2C9CYP2C19
SCHEMBL3482082 0.76 SLC6A2 (0.52) SLC6A2TAAR1CYP1A2CYP2C9CYP2C19
SCHEMBL15302065 0.75 ALDH1A1 (0.36) SLC6A2TAAR1CYP1A2CYP2C9CYP2C19

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109715680-B Process for preparing high cis-1, 4-polydienes with lanthanide-based catalyst compositions 株式会社普利司通 2021-10-19 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8968458-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2015-03-03 US disclosed
US-8808446-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2014-08-19 US disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100151384-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2010-06-17 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-20090050020-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2009-02-26 US disclosed
EP-1855159-A1 COMPOSITION FOR UNDERLAYER FILM OF RESIST AND PROCESS FOR PRODUCING THE SAME JSR Corporation (JP) 2007-11-14 EP disclosed
US-4831091-A USING A COORDINATION CATALYST CONTAINING A SILANETRIOL OR -DIOL AS WELL AS AN AROMATIC ESTSER; ODORLESS; STEREOSPECIFIC; PARTICLE SIZES CHISSO CORPORATION (JP) 1989-05-16 US disclosed