SCHEMBL3481820

SCHEMBL3481820

CCCCC(C)(CCCC)[SiH2]Cl

nearest known ligand 0.34

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
FDPS P14324 1/20 0.34
TSHR P16473 3/20 0.32
TDP1 Q9NUW8 1/20 0.32
LMNA P02545 1/20 0.32
THRB P10828 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27943192 0.85 FDPS (0.30) FDPS
SCHEMBL3482572 0.82
SCHEMBL3482482 0.72 FDPS (0.34) FDPSTSHRLMNATHRB
SCHEMBL1030960 0.70 FDPS (0.37) FDPSTSHRTHRB
SCHEMBL3482619 0.70 FDPS (0.33) FDPSTSHRTDP1LMNA
SCHEMBL7755461 0.70 FDPS (0.37) FDPSTSHRTHRB
SCHEMBL5528900 0.69 TSHR (0.40) FDPSTSHRTDP1LMNATHRB
SCHEMBL7632050 0.69
SCHEMBL2121838 0.69 TSHR (0.40) FDPSTSHRTHRB
SCHEMBL2122250 0.69 TSHR (0.40) FDPSTSHRTHRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed