SCHEMBL3482619

SCHEMBL3482619

CCCCC(CC)(CCCC)[SiH2]Cl

nearest known ligand 0.33

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
FDPS P14324 1/20 0.33
TSHR P16473 2/20 0.30
TDP1 Q9NUW8 1/20 0.30
LMNA P02545 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8926905 0.85 TSHR (0.38) FDPSTSHR
SCHEMBL8532581 0.85 TSHR (0.38) FDPSTSHR
SCHEMBL7691167 0.85 TSHR (0.38) FDPSTSHR
SCHEMBL7755461 0.84 FDPS (0.37) FDPSTSHR
SCHEMBL11805078 0.76
SCHEMBL3482197 0.74 FDPS (0.33) FDPSTSHRLMNA
SCHEMBL28228651 0.72 FDPS (0.36) FDPSTSHRTDP1LMNA
SCHEMBL10882953 0.71 TSHR (0.38) FDPSTSHRTDP1LMNA
SCHEMBL3481820 0.70 FDPS (0.34) FDPSTSHRTDP1LMNA
SCHEMBL27316692 0.69 FDPS (0.37) FDPSTSHRTDP1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed