⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3482752 | 0.86 | LPAR3 (0.33) | — | |
| SCHEMBL3482911 | 0.83 | — | — | |
| SCHEMBL1270676 | 0.79 | — | — | |
| SCHEMBL2471457 | 0.78 | — | — | |
| SCHEMBL11806982 | 0.78 | — | — | |
| SCHEMBL4074019 | 0.77 | — | — | |
| SCHEMBL3481788 | 0.77 | — | — | |
| SCHEMBL3447050 | 0.76 | — | — | |
| SCHEMBL1263469 | 0.75 | TDP1 (0.33) | — | |
| SCHEMBL1262064 | 0.75 | ALDH1A1 (0.33) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250389016-A1 | GAS BARRIER FILM MATERIAL, SILICON OXIDE FILM, AND PRODUCTION METHOD OF SILICON OXIDE FILM | TOSOH CORP (JP) | 2025-12-25 | — | — | US | disclosed |
| CN-118843711-A | Material for gas barrier film, silicon oxide film, and method for producing silicon oxide film | 东曹株式会社 | 2024-10-25 | — | — | CN | disclosed |
| EP-4398035-A1 | WAFER EDGE PROTECTIVE-FILM-FORMING COMPOSITION FOR SEMICONDUCTOR MANUFACTURING | Nissan Chemical Corporation (JP) | 2024-07-10 | — | — | EP | disclosed |
| WO-2022230944-A1 | PLANARIZING FILM MANUFACTURING METHOD, PLANARIZING FILM MATERIAL, AND PLANARIZING FILM | 東ソー株式会社 | 2022-11-03 | — | — | WO | disclosed |
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20120328830-A1 | Coating Film and Coating Film Formation Method | PANASONIC CORPORATION (JP) | 2012-12-27 | — | — | US | disclosed |
| EP-2538246-A2 | Coating film and coating film formation method | Seiko Epson Corporation (JP) | 2012-12-26 | — | — | EP | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| US-7291567-B2 | Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | JSR CORPORATION (JP) | 2007-11-06 | — | — | US | disclosed |
| US-7015292-B2 | Silicon-containing olefin copolymer, crosslinkable rubber composition thereof, and use thereof | MITSUI CHEMICALS, INC. (JP) | 2006-03-21 | — | — | US | disclosed |
| US-20060024980-A1 | Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | JSR CORPORATION (JP) | 2006-02-02 | — | — | US | disclosed |
| EP-1619226-A1 | Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | JSR Corporation (JP) | 2006-01-25 | — | — | EP | disclosed |
| US-20050038214-A1 | Silicon-containing olefin copolymer, crosslinkable rubber composition thereof, and use thereof | MITSUI CHEMICALS, INC. (JP) | 2005-02-17 | — | — | US | disclosed |
| US-5645901-A | RESIN SUBSTRATE, CURED COATING LAMINATED TO SUBSTRATE, SILOXANE CURED COATING CONTAINING FINE SILICA PARTICLES, AND INDIUM TIN OXIDE FILM | SHARP KABUSHIKI KAISHA (JP) | 1997-07-08 | — | — | US | disclosed |
| US-4395563-A | ACID CATALYSTS, SOLID GROUP 2A METAL OXIDES | GENERAL ELECTRIC COMPANY (US) | 1983-07-26 | — | — | US | disclosed |