⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3482104 | 0.85 | TSHR (0.35) | — | |
| SCHEMBL4199416 | 0.81 | FAAH (0.45) | — | |
| SCHEMBL4446381 | 0.78 | — | — | |
| SCHEMBL3481827 | 0.77 | — | — | |
| SCHEMBL3482911 | 0.75 | — | — | |
| SCHEMBL28053263 | 0.73 | — | — | |
| SCHEMBL7743560 | 0.73 | — | — | |
| SCHEMBL822069 | 0.72 | — | — | |
| SCHEMBL4081166 | 0.72 | — | — | |
| SCHEMBL3447068 | 0.72 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4398035-A1 | WAFER EDGE PROTECTIVE-FILM-FORMING COMPOSITION FOR SEMICONDUCTOR MANUFACTURING | Nissan Chemical Corporation (JP) | 2024-07-10 | — | — | EP | disclosed |
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| US-20080274627-A1 | SILICON-CONTAINING FILM, FORMING MATERIAL, MAKING METHOD, AND SEMICONDUCTOR DEVICE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-11-06 | — | — | US | disclosed |
| US-7291567-B2 | Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | JSR CORPORATION (JP) | 2007-11-06 | — | — | US | disclosed |
| US-20060024980-A1 | Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | JSR CORPORATION (JP) | 2006-02-02 | — | — | US | disclosed |
| EP-1619226-A1 | Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | JSR Corporation (JP) | 2006-01-25 | — | — | EP | disclosed |
| US-5645901-A | RESIN SUBSTRATE, CURED COATING LAMINATED TO SUBSTRATE, SILOXANE CURED COATING CONTAINING FINE SILICA PARTICLES, AND INDIUM TIN OXIDE FILM | SHARP KABUSHIKI KAISHA (JP) | 1997-07-08 | — | — | US | disclosed |