Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 1/20 | 0.35 |
| ▸ | THRB | P10828 | 1/20 | 0.35 |
| ▸ | FDPS | P14324 | 11/20 | 0.33 |
| ▸ | GGPS1 | O95749 | 7/20 | 0.33 |
| ▸ | SMPD1 | P17405 | 4/20 | 0.33 |
| ▸ | CES2 | O00748 | 1/20 | 0.31 |
| ▸ | LPAR1 | Q92633 | 1/20 | 0.31 |
| ▸ | LPAR3 | Q9UBY5 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9091916 | 0.97 | TSHR (0.40) | TSHRTHRBFDPSGGPS1SMPD1 | |
| SCHEMBL415769 | 0.95 | LMNA (0.30) | TSHR | |
| SCHEMBL3481474 | 0.95 | LMNA (0.30) | TSHR | |
| SCHEMBL613245 | 0.95 | TSHR (0.39) | TSHRTHRBFDPSGGPS1SMPD1 | |
| SCHEMBL2120583 | 0.92 | TSHR (0.44) | TSHRTHRBFDPSGGPS1SMPD1 | |
| SCHEMBL2120675 | 0.92 | TSHR (0.44) | TSHRTHRBFDPSGGPS1SMPD1 | |
| SCHEMBL2120121 | 0.92 | TSHR (0.44) | TSHRTHRBFDPSGGPS1SMPD1 | |
| SCHEMBL6057116 | 0.92 | TSHR (0.44) | TSHRTHRBFDPSGGPS1SMPD1 | |
| SCHEMBL610797 | 0.92 | TSHR (0.44) | TSHRTHRBFDPSGGPS1SMPD1 | |
| SCHEMBL2122903 | 0.92 | TSHR (0.44) | TSHRTHRBFDPSGGPS1SMPD1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |