SCHEMBL3481944

SCHEMBL3481944

Cc1ccc(CCCO[SiH3])cc1

nearest known ligand 0.49

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
KCNH2 Q12809 5/20 0.49
DRD2 P14416 1/20 0.49
DRD4 P21917 1/20 0.49
DRD3 P35462 1/20 0.49
CYP1A2 P05177 1/20 0.46
CYP2A6 P11509 1/20 0.46
TAAR1 Q96RJ0 1/20 0.46
IGF1R P08069 1/20 0.46
ALOX15 P16050 1/20 0.46
CTDSP1 Q9GZU7 1/20 0.42
HRH1 P35367 1/20 0.42
KDM4E B2RXH2 1/20 0.41
LMNA P02545 1/20 0.41
APOBEC3A P31941 1/20 0.41
APOBEC3G Q9HC16 1/20 0.41
AGXT P21549 2/20 0.40
IDO1 P14902 2/20 0.39
HRH3 Q9Y5N1 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481791 0.86 CYP1A2 (0.50) KCNH2DRD2DRD4DRD3CYP1A2
SCHEMBL171910 0.80 KCNH2 (0.50) KCNH2DRD2DRD4DRD3CYP1A2
SCHEMBL21185863 0.78 KCNH2 (0.62) KCNH2DRD2DRD4DRD3HRH3
SCHEMBL29156502 0.78 IDO1 (0.38) KCNH2DRD2DRD4DRD3HRH1
SCHEMBL6740350 0.78 TAAR1 (0.46) TAAR1IDO1
SCHEMBL6546878 0.78 CYP1A2 (0.62) KCNH2DRD2DRD4DRD3CYP1A2
SCHEMBL6546754 0.78 IGF1R (0.64) KCNH2DRD2DRD4DRD3CYP1A2
SCHEMBL703560 0.77 IDO1 (0.61) DRD2DRD4DRD3LMNAIDO1
SCHEMBL20234296 0.77 KCNH2 (0.56) KCNH2DRD2DRD4DRD3CYP1A2
SCHEMBL10571160 0.76 IGF1R (0.61) KCNH2CYP1A2CYP2A6TAAR1IGF1R

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed