SCHEMBL3481791

SCHEMBL3481791

Cc1ccc(CCO[SiH3])cc1

nearest known ligand 0.50

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 1/20 0.50
CYP2A6 P11509 1/20 0.50
TAAR1 Q96RJ0 1/20 0.50
KCNH2 Q12809 6/20 0.46
DRD2 P14416 1/20 0.43
DRD4 P21917 1/20 0.43
DRD3 P35462 1/20 0.43
AGXT P21549 2/20 0.43
IDO1 P14902 1/20 0.42
HRH3 Q9Y5N1 1/20 0.41
IGF1R P08069 1/20 0.39
ALOX15 P16050 1/20 0.39
MAPT P10636 1/20 0.39
ACHE P22303 1/20 0.38
TDP1 Q9NUW8 1/20 0.38
CHKA P35790 1/20 0.38
MEN1 O00255 1/20 0.37
ALDH1A1 P00352 1/20 0.37
KMT2A Q03164 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481944 0.86 KCNH2 (0.49) CYP1A2CYP2A6TAAR1KCNH2DRD2
SCHEMBL9008786 0.80 KCNH2 (0.59) CYP1A2CYP2A6TAAR1KCNH2DRD2
SCHEMBL2612033 0.78 CYP1A2 (0.52) CYP1A2CYP2A6TAAR1KCNH2DRD2
SCHEMBL29058808 0.77 TAAR1 (0.57) TAAR1IDO1HRH3MAPT
SCHEMBL6684541 0.77 THRB (0.37) MAPTMEN1KMT2A
SCHEMBL14621335 0.76 CYP1A2 (0.50) CYP1A2CYP2A6TAAR1KCNH2DRD2
SCHEMBL15396308 0.76 CYP1A2 (0.50) CYP1A2CYP2A6TAAR1KCNH2DRD2
SCHEMBL29018028 0.76 CYP1A2 (0.50) CYP1A2CYP2A6TAAR1KCNH2DRD2
SCHEMBL2804399 0.76 GFER (0.59) MAPTTDP1MEN1ALDH1A1KMT2A
SCHEMBL143961 0.76 CYP1A2 (0.68) CYP1A2CYP2A6TAAR1KCNH2AGXT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-112996841-B Crosslinkable organosiloxane compositions 瓦克化学股份公司 2022-12-27 CN disclosed
CN-112996841-A Crosslinkable organosiloxane compositions 瓦克化学股份公司 2021-06-18 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
EP-2615497-A1 RESIST PATTERN FORMING METHOD JSR Corporation (JP) 2013-07-17 EP disclosed
CN-101392004-B (thio)phenoxy phenyl silane composition and method for making same ROHM & HAAS 2011-10-12 CN disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
CN-101392004-A (thio)phenoxy phenyl silane composition and method for making same ROHM & HAAS (US) 2009-03-25 CN disclosed