SCHEMBL3481958

SCHEMBL3481958

CCCCc1ccccc1C(CC)C(CC)O[SiH3]

nearest known ligand 0.38

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
CYSLTR2 Q9NS75 9/20 0.38
CYSLTR1 Q9Y271 9/20 0.38
LIPG Q9Y5X9 1/20 0.35
CYP3A4 P08684 1/20 0.33
CYP2D6 P10635 1/20 0.33
CYP2C9 P11712 1/20 0.33
ALOX5 P09917 1/20 0.32
PTGS2 P35354 1/20 0.32
ADRA2A P08913 1/20 0.32
ADRA2B P18089 1/20 0.32
ADRA2C P18825 1/20 0.32
TLR8 Q9NR97 1/20 0.31
THRA P10827 1/20 0.31
THRB P10828 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481660 0.86 CYSLTR2 (0.39) CYSLTR2CYSLTR1LIPGCYP3A4CYP2D6
SCHEMBL704445 0.80 CYSLTR2 (0.40) CYSLTR2CYSLTR1LIPGCYP3A4CYP2D6
SCHEMBL706042 0.78 ADRA2A (0.43) CYSLTR2CYSLTR1LIPGCYP3A4CYP2D6
SCHEMBL3482257 0.75 CYSLTR2 (0.46) CYSLTR2CYSLTR1LIPGALOX5PTGS2
SCHEMBL706089 0.75 CYSLTR2 (0.43) CYSLTR2CYSLTR1LIPGCYP3A4CYP2D6
SCHEMBL3482061 0.74 CYSLTR2 (0.45) CYSLTR2CYSLTR1LIPGCYP3A4CYP2D6
SCHEMBL18378474 0.74 CYSLTR2 (0.47) CYSLTR2CYSLTR1LIPGCYP3A4CYP2D6
SCHEMBL3482119 0.73 CYSLTR2 (0.47) CYSLTR2CYSLTR1LIPGALOX5PTGS2
SCHEMBL10979504 0.72 TSHR (0.52) CYSLTR2CYSLTR1LIPGCYP3A4CYP2D6
SCHEMBL5665256 0.71 CYSLTR2 (0.46) CYSLTR2CYSLTR1LIPGCYP3A4CYP2D6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed