SCHEMBL706089

SCHEMBL706089

CCCCc1ccccc1C(CCC)O[SiH3]

nearest known ligand 0.43

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
CYSLTR2 Q9NS75 11/20 0.43
CYSLTR1 Q9Y271 11/20 0.43
LIPG Q9Y5X9 1/20 0.37
ADRA2A P08913 1/20 0.35
ADRA2B P18089 1/20 0.35
ADRA2C P18825 1/20 0.35
CYP3A4 P08684 1/20 0.35
CYP2D6 P10635 1/20 0.35
CYP2C9 P11712 1/20 0.35
ALOX5 P09917 1/20 0.33
PTGS2 P35354 1/20 0.33
TLR8 Q9NR97 1/20 0.33
THRA P10827 1/20 0.32
THRB P10828 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704445 0.89 CYSLTR2 (0.40) CYSLTR2CYSLTR1LIPGADRA2AADRA2B
SCHEMBL21175576 0.87 CYSLTR2 (0.44) CYSLTR2CYSLTR1LIPGADRA2AADRA2B
SCHEMBL702997 0.86 CYSLTR2 (0.35) CYSLTR2CYSLTR1LIPGCYP3A4CYP2D6
SCHEMBL702730 0.85 TAS1R3 (0.36) CYSLTR2CYSLTR1ADRA2AADRA2BADRA2C
SCHEMBL3482257 0.84 CYSLTR2 (0.46) CYSLTR2CYSLTR1LIPGALOX5PTGS2
SCHEMBL706042 0.80 ADRA2A (0.43) CYSLTR2CYSLTR1LIPGADRA2AADRA2B
SCHEMBL707196 0.80 GABRA1 (0.36) CYP3A4ALOX5
SCHEMBL3481497 0.78 ADRA2A (0.40) CYSLTR2CYSLTR1ADRA2AADRA2BADRA2C
SCHEMBL16933734 0.77 CYSLTR2 (0.49) CYSLTR2CYSLTR1LIPGALOX5PTGS2
SCHEMBL16934155 0.77 CYSLTR2 (0.49) CYSLTR2CYSLTR1LIPGALOX5PTGS2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed