SCHEMBL3482018

SCHEMBL3482018

Cc1ccc(C(CO[SiH3])(c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.51

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
KIF11 P52732 12/20 0.51
MEN1 O00255 5/20 0.42
KMT2A Q03164 5/20 0.42
SMN1; SMN2 Q16637 2/20 0.38
LMNA P02545 2/20 0.38
ALDH1A1 P00352 1/20 0.38
POLB P06746 1/20 0.38
XBP1 P17861 1/20 0.38
MAPK1 P28482 1/20 0.38
HTT P42858 1/20 0.38
NPSR1 Q6W5P4 1/20 0.38
L3MBTL1 Q9Y468 1/20 0.38
TSHR P16473 2/20 0.37
ALOX12 P18054 1/20 0.37
ACHE P22303 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3867377 0.92 TSHR (0.42) KIF11MEN1KMT2ALMNAHTT
SCHEMBL238217 0.88 KIF11 (0.41) KIF11ALDH1A1MAPK1TSHR
SCHEMBL3482027 0.81 KIF11 (0.57) KIF11MEN1KMT2A
SCHEMBL1314030 0.78 KIF11 (0.34) KIF11SMN1; SMN2ALDH1A1MAPK1TSHR
SCHEMBL1314642 0.78 KIF11 (0.34) KIF11SMN1; SMN2ALDH1A1MAPK1TSHR
SCHEMBL8327566 0.74 KIF11 (0.56) KIF11MEN1KMT2ASMN1; SMN2LMNA
SCHEMBL31176546 0.74 KIF11 (0.56) KIF11MEN1KMT2ASMN1; SMN2LMNA
SCHEMBL3482515 0.74 KIF11 (0.43) KIF11MEN1KMT2ALMNAALDH1A1
SCHEMBL9248895 0.72 KIF11 (0.46) KIF11LMNAALDH1A1MAPK1HTT
SCHEMBL3867726 0.72 KIF11 (0.46) KIF11MEN1KMT2ATSHRACHE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
EP-0193643-A2 Curable resin composition KABUSHIKI KAISHA TOSHIBA (JP) 1986-09-10 EP disclosed