Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KIF11 | P52732 | 17/20 | 0.57 |
| ▸ | MEN1 | O00255 | 3/20 | 0.43 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.43 |
| ▸ | KCNH2 | Q12809 | 2/20 | 0.41 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.41 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.41 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.41 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3867726 | 0.93 | KIF11 (0.46) | KIF11MEN1KMT2AKCNH2CYP3A4 | |
| SCHEMBL703111 | 0.89 | KIF11 (0.48) | KIF11KCNH2CYP3A4CYP2D6CYP2C9 | |
| SCHEMBL3482018 | 0.81 | KIF11 (0.51) | KIF11MEN1KMT2A | |
| SCHEMBL3868241 | 0.81 | KIF11 (0.51) | KIF11KCNH2CYP3A4CYP2D6CYP2C9 | |
| SCHEMBL705749 | 0.77 | KIF11 (0.55) | KIF11KCNH2CYP3A4CYP2D6CYP2C9 | |
| SCHEMBL10604505 | 0.74 | KIF11 (0.49) | KIF11MEN1KMT2A | |
| SCHEMBL6005376 | 0.73 | KIF11 (0.47) | KIF11MEN1KMT2ACYP3A4CYP2C19 | |
| SCHEMBL3867377 | 0.72 | TSHR (0.42) | KIF11MEN1KMT2ACYP3A4CYP2D6 | |
| SCHEMBL20483662 | 0.71 | PTPN1 (0.39) | KCNH2CYP3A4CYP2D6 | |
| SCHEMBL8327566 | 0.71 | KIF11 (0.56) | KIF11MEN1KMT2AKCNH2CYP3A4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |