Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TAAR1 | Q96RJ0 | 3/20 | 0.52 |
| ▸ | TRPA1 | O75762 | 6/20 | 0.50 |
| ▸ | AOC3 | Q16853 | 2/20 | 0.47 |
| ▸ | RIPK1 | Q13546 | 1/20 | 0.45 |
| ▸ | LMNA | P02545 | 2/20 | 0.41 |
| ▸ | ADRA2A | P08913 | 1/20 | 0.40 |
| ▸ | ADRA2C | P18825 | 1/20 | 0.40 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.40 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5143307 | 0.78 | HTR2A (0.46) | TAAR1TRPA1LMNAKDM4E | |
| SCHEMBL3481490 | 0.77 | TAAR1 (0.52) | TAAR1TRPA1AOC3RIPK1KDM4E | |
| SCHEMBL11651391 | 0.77 | TAAR1 (0.52) | TAAR1TRPA1AOC3RIPK1 | |
| SCHEMBL29403357 | 0.76 | TAAR1 (0.50) | TAAR1TRPA1AOC3RIPK1LMNA | |
| SCHEMBL5266627 | 0.76 | TAAR1 (0.50) | TAAR1TRPA1AOC3RIPK1KDM4E | |
| Hydrogen Peroxide SCHEMBL11692595 | 0.73 | TRPA1 (0.61) | TAAR1TRPA1AOC3RIPK1LMNA | |
| SCHEMBL61000 | 0.73 | TRPA1 (0.68) | TAAR1TRPA1AOC3RIPK1LMNA | |
| Hydrogen Peroxide SCHEMBL27735407 | 0.73 | TRPA1 (0.61) | TAAR1TRPA1AOC3RIPK1LMNA | |
| Hydrogen Peroxide SCHEMBL190109 | 0.73 | TRPA1 (0.61) | TAAR1TRPA1AOC3RIPK1LMNA | |
| SCHEMBL60429 | 0.73 | TRPA1 (0.68) | TAAR1TRPA1AOC3RIPK1LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| US-7388059-B2 | Ethylene polymer, catalyst for producing thereof and method for producing thereof | JAPAN POLYETHYLENE CORPORATION (JP) | 2008-06-17 | — | — | US | disclosed |
| US-20050288459-A1 | Ethylene polymer, catalyst for producing thereof and method for producing thereof | JAPAN POLYETHYLENE CORPORATION (JP) | 2005-12-29 | — | — | US | disclosed |