SCHEMBL3482050

SCHEMBL3482050

CCO[SiH](Cc1ccc(C)cc1)OCC

nearest known ligand 0.40

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
AGXT P21549 2/20 0.40
IDO1 P14902 2/20 0.39
CYP1A2 P05177 1/20 0.37
CYP2A6 P11509 1/20 0.37
TAAR1 Q96RJ0 1/20 0.37
ACHE P22303 1/20 0.35
TDP1 Q9NUW8 1/20 0.35
CA1 P00915 1/20 0.34
CA2 P00918 1/20 0.34
CA9 Q16790 1/20 0.34
ALDH1A1 P00352 1/20 0.34
MEN1 O00255 1/20 0.34
KMT2A Q03164 1/20 0.34
SRD5A2 P31213 1/20 0.32
TRPM8 Q7Z2W7 1/20 0.32
KCNH2 Q12809 1/20 0.32
CHRM2 P08172 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482143 0.83 AGXT (0.38) AGXTIDO1CYP1A2CYP2A6TAAR1
SCHEMBL15734423 0.81 LMNA (0.39) AGXTIDO1CYP1A2TAAR1TDP1
SCHEMBL17937579 0.81 SLC6A2 (0.41) AGXTIDO1CYP2A6TAAR1TDP1
SCHEMBL17937627 0.81 IDO1 (0.39) IDO1CYP1A2CYP2A6TAAR1ALDH1A1
SCHEMBL483071 0.81 TDP1 (0.43) CYP1A2TDP1ALDH1A1MEN1KMT2A
SCHEMBL123780 0.80 TP53 (0.44) IDO1TAAR1TDP1ALDH1A1
SCHEMBL25329243 0.78 TP53 (0.42) IDO1TAAR1ALDH1A1
SCHEMBL384789 0.77 AGXT (0.43) AGXTIDO1CYP1A2CYP2A6TAAR1
SCHEMBL1503461 0.76 ALDH1A1 (0.41) CA1CA2ALDH1A1
SCHEMBL15733402 0.76 IDO1 (0.44) IDO1TAAR1ALDH1A1MEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-107076894-B Infrared shielding composition, cured film, and solid-state imaging device JSR株式会社 2020-01-31 CN disclosed
CN-107076894-A Infrared shielding composition, cured film, and solid-state imaging device JSR株式会社 2017-08-18 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed