SCHEMBL3482087

SCHEMBL3482087

[SiH3]OCC(Cc1ccccc1)Cc1ccccc1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
EPHX1 P07099 1/20 0.44
TAAR1 Q96RJ0 4/20 0.41
SLC6A2 P23975 2/20 0.41
SIGMAR1 Q99720 2/20 0.41
MAOA P21397 1/20 0.41
SLC6A4 P31645 1/20 0.41
SLC6A3 Q01959 1/20 0.41
CYP2A6 P11509 1/20 0.41
ADORA2A P29274 1/20 0.41
ADORA1 P30542 1/20 0.41
CYP1A2 P05177 1/20 0.40
SLC18A2 Q05940 1/20 0.39
ANPEP P15144 1/20 0.39
CYP2D6 P10635 1/20 0.39
SRR Q9GZT4 2/20 0.38
ALPI P09923 1/20 0.38
PKM P14618 1/20 0.38
PTGS1 P23219 1/20 0.38
XIAP P98170 1/20 0.38
SLC7A5 Q01650 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3808422 0.78 SIGMAR1 (0.48) EPHX1TAAR1SLC6A2SIGMAR1MAOA
SCHEMBL3481817 0.78 EPHX1 (0.41) EPHX1TAAR1SLC6A2SIGMAR1MAOA
SCHEMBL12459378 0.77 SIGMAR1 (0.46) EPHX1TAAR1SLC6A2SIGMAR1MAOA
SCHEMBL4981467 0.77 EPHX1 (0.60) EPHX1TAAR1SLC6A2SIGMAR1MAOA
Ammonia Solution, Strong SCHEMBL21412646 0.75 EPHX1 (0.57) EPHX1TAAR1SLC6A2SIGMAR1MAOA
SCHEMBL6835652 0.73 EPHX1 (0.50) EPHX1TAAR1SLC6A2SIGMAR1MAOA
SCHEMBL18489459 0.73 SIGMAR1 (0.46) EPHX1TAAR1SLC6A2SIGMAR1MAOA
SCHEMBL18085425 0.72 EPHX1 (0.46) EPHX1TAAR1SLC6A2SIGMAR1MAOA
SCHEMBL3482737 0.71 EPHX1 (0.48) EPHX1TAAR1SLC6A2SIGMAR1MAOA
SCHEMBL21239583 0.71 TSHR (0.58) EPHX1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109641482-B Preparation of cis-1, 4-polydienes having multiple silane functional groups prepared by in situ hydrosilylation of polymer glues 株式会社普利司通 2021-11-05 CN disclosed
US-10259208-B2 Three-dimensional shaped object manufacturing device, method for manufacturing three-dimensional shaped object, and three-dimensional shaped object SEIKO EPSON CORPORATION (JP) 2019-04-16 US disclosed
US-9579852-B2 Method for manufacturing three-dimensional shaped object SEIKO EPSON CORPORATION (JP) 2017-02-28 US disclosed
US-20150251352-A1 THREE-DIMENSIONAL SHAPED OBJECT MANUFACTURING DEVICE, METHOD FOR MANUFACTURING THREE-DIMENSIONAL SHAPED OBJECT, AND THREE-DIMENSIONAL SHAPED OBJECT SEIKO EPSON CORPORATION (JP) 2015-09-10 US disclosed
US-20150251336-A1 THREE-DIMENSIONAL SHAPED OBJECT MANUFACTURING DEVICE, METHOD FOR MANUFACTURING THREE-DIMENSIONAL SHAPED OBJECT, AND THREE-DIMENSIONAL SHAPED OBJECT SEIKO EPSON CORPORATION (JP) 2015-09-10 US disclosed
US-20150246483-A1 THREE-DIMENSIONAL SHAPED OBJECT MANUFACTURING DEVICE, MANUFACTURING METHOD OF THREE-DIMENSIONAL SHAPED OBJECT, AND THREE-DIMENSIONAL SHAPED OBJECT SEIKO EPSON CORPORATION (JP) 2015-09-03 US disclosed
US-20150210016-A1 METHOD FOR MANUFACTURING THREE-DIMENSIONAL SHAPED OBJECT AND THREE-DIMENSIONAL SHAPED OBJECT SEIKO EPSON CORPORATION (JP) 2015-07-30 US disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed