SCHEMBL3482737

SCHEMBL3482737

[SiH3]OC(Cc1ccccc1)Cc1ccccc1

nearest known ligand 0.48

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
EPHX1 P07099 1/20 0.48
TAAR1 Q96RJ0 4/20 0.44
SLC6A2 P23975 2/20 0.44
SIGMAR1 Q99720 2/20 0.44
MAOA P21397 1/20 0.44
SLC6A4 P31645 1/20 0.44
SLC6A3 Q01959 1/20 0.44
CYP2A6 P11509 1/20 0.44
ADORA2A P29274 1/20 0.44
ADORA1 P30542 1/20 0.44
CYP1A2 P05177 1/20 0.43
LAP3 P28838 3/20 0.42
ANPEP P15144 2/20 0.42
SLC18A2 Q05940 1/20 0.41
CYP2D6 P10635 1/20 0.41
SRR Q9GZT4 1/20 0.41
TSHR P16473 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482284 0.87 TRPA1 (0.46) EPHX1TAAR1SLC6A2SIGMAR1MAOA
SCHEMBL3482080 0.85 SLC6A2 (0.40) EPHX1TAAR1SLC6A2SIGMAR1MAOA
SCHEMBL3481810 0.82 SIGMAR1 (0.42) SIGMAR1MAOA
SCHEMBL296869 0.82 SMN1; SMN2 (0.41) EPHX1TAAR1SLC6A2SIGMAR1MAOA
SCHEMBL7889486 0.79 EPHX1 (0.52) EPHX1TAAR1SLC6A2SIGMAR1MAOA
SCHEMBL2239544 0.78 SIGMAR1 (0.54) EPHX1TAAR1SLC6A2SIGMAR1MAOA
Ammonia Solution, Strong SCHEMBL15012391 0.77 EPHX1 (0.50) EPHX1TAAR1SLC6A2SIGMAR1MAOA
SCHEMBL6910858 0.75 EPHX1 (0.48) EPHX1TAAR1SLC6A2SIGMAR1MAOA
SCHEMBL791591 0.75 TAAR1 (0.50) EPHX1TAAR1SLC6A2SIGMAR1MAOA
SCHEMBL675684 0.75 SLC6A2 (0.44) EPHX1TAAR1SLC6A2SIGMAR1MAOA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109641482-B Preparation of cis-1, 4-polydienes having multiple silane functional groups prepared by in situ hydrosilylation of polymer glues 株式会社普利司通 2021-11-05 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed