⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3481738 | 0.89 | — | — | |
| SCHEMBL3481852 | 0.88 | — | — | |
| SCHEMBL1134138 | 0.83 | TSHR (0.36) | — | |
| SCHEMBL704082 | 0.82 | TSHR (0.32) | — | |
| SCHEMBL3482255 | 0.79 | — | — | |
| SCHEMBL125173 | 0.75 | — | — | |
| SCHEMBL692447 | 0.75 | — | — | |
| SCHEMBL4278252 | 0.75 | ADRB2 (0.38) | — | |
| SCHEMBL3482339 | 0.73 | — | — | |
| SCHEMBL2490702 | 0.73 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114616652-A | Monoalkoxysilanes and dense organosilica films prepared therefrom | 弗萨姆材料美国有限责任公司 | 2022-06-10 | — | — | CN | claimed |
| CN-119998691-A | Antireflection film, liquid composition set, and method for producing antireflection film | 日本板硝子株式会社 | 2025-05-13 | — | — | CN | disclosed |
| WO-2024080149-A1 | ANTI-REFLECTION FILM, LIQUID COMPOSITION, LIQUID COMPOSITION GROUP, AND METHOD FOR MANUFACTURING ANTI-REFLECTION FILM | 日本板硝子株式会社 | 2024-04-18 | — | — | WO | disclosed |
| US-9546237-B2 | Stabilization of polymers that contain a hydrolyzable functionality | BRIDGESTONE CORPORATION (JP) | 2017-01-17 | — | — | US | disclosed |
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20130331520-A1 | STABILIZATION OF POLYMERS THAT CONTAIN A HYDROLYZABLE FUNCTIONALITY | BRIDGESTONE CORPORATION (JP) | 2013-12-12 | — | — | US | disclosed |
| CN-102308020-A | Insulating film material, and film formation method utilizing the material, and insulating film | NAT INST FOR MATERIAL SCIENCE | 2012-01-04 | — | — | CN | disclosed |
| US-20110313184-A1 | INSULATING FILM MATERIAL, AND FILM FORMATION METHOD UTILIZING THE MATERIAL, AND INSULATING FILM | TAIYO NIPPON SANSO CORPORATION (JP) | 2011-12-22 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| US-7604866-B2 | Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2009-10-20 | — | — | US | disclosed |
| US-20060269724-A1 | Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2006-11-30 | — | — | US | disclosed |
| US-20040077757-A1 | Coating composition for use in producing an insulating thin film | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2004-04-22 | — | — | US | disclosed |