SCHEMBL3482430

SCHEMBL3482430

CO[Si](C)(C)c1ccc(C)cc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ACHE P22303 6/20 0.42
TDP1 Q9NUW8 2/20 0.42
NPC1 O15118 3/20 0.36
RAB9A P51151 3/20 0.36
KMT2A Q03164 2/20 0.36
MEN1 O00255 1/20 0.34
RELA Q04206 2/20 0.33
ALDH1A1 P00352 2/20 0.33
CA1 P00915 1/20 0.33
CA2 P00918 1/20 0.33
CA7 P43166 1/20 0.33
CA9 Q16790 1/20 0.33
SMN1; SMN2 Q16637 2/20 0.32
NPSR1 Q6W5P4 2/20 0.32
MAPT P10636 1/20 0.32
HPGD P15428 2/20 0.31
PKM P14618 2/20 0.31
NOTUM Q6P988 1/20 0.31
POLB P06746 1/20 0.31
NFKB1 P19838 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL676007 0.89 CA12 (0.30) CA1CA2CA7CA9
SCHEMBL6751519 0.87 ALDH1A1 (0.38) ACHETDP1NPC1RAB9AKMT2A
SCHEMBL6744616 0.87 ALDH1A1 (0.38) ACHETDP1NPC1RAB9AKMT2A
SCHEMBL6748706 0.82 NPC1 (0.35) ACHENPC1RAB9AKMT2AMEN1
SCHEMBL9743132 0.81 ACHE (0.44) ACHETDP1NPC1RAB9AKMT2A
SCHEMBL21870376 0.81 ESR1 (0.41) HPGD
SCHEMBL21096087 0.81 ESR2 (0.32) KDM4E
SCHEMBL12977035 0.81 NR1H2 (0.38) ACHE
SCHEMBL6749469 0.81 ALDH1A1 (0.38) ACHETDP1NPC1RAB9AKMT2A
SCHEMBL6748677 0.81 ALDH1A1 (0.38) ACHETDP1NPC1RAB9AKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-107076894-B Infrared shielding composition, cured film, and solid-state imaging device JSR株式会社 2020-01-31 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-8110639-B2 Transparent and flame retardant polysulfone compositions SOLVAY ADVANCED POLYMERS, L.L.C. (US) 2012-02-07 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-20090283476-A1 Transparent and flame retardant polysulfone compositions SOLVAY ADVANCED POLYMERS, L.L.C. (US) 2009-11-19 US disclosed
EP-1906246-A2 Photosensitive resin composition, production method of cured relief pattern using the same and semiconductor device FUJIFILM Corporation (JP) 2008-04-02 EP disclosed