SCHEMBL3482503

SCHEMBL3482503

CCO[Si](OCC)(OCC)c1ccc(CC)cc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TP53 P04637 2/20 0.39
TAAR1 Q96RJ0 1/20 0.38
CYP2A6 P11509 1/20 0.37
LPL P06858 1/20 0.37
LIPG Q9Y5X9 1/20 0.37
ALDH1A1 P00352 1/20 0.35
SMN1; SMN2 Q16637 4/20 0.35
NPC1 O15118 1/20 0.35
RAB9A P51151 1/20 0.35
TDP1 Q9NUW8 2/20 0.34
CA2 P00918 1/20 0.34
TSHR P16473 1/20 0.34
MAPK1 P28482 1/20 0.34
ATM Q13315 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
PLAU P00749 1/20 0.33
APOBEC3G Q9HC16 1/20 0.33
CYP2C19 P33261 1/20 0.33
METAP2 P50579 1/20 0.33
LMNA P02545 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14267361 0.94 TP53 (0.38) TP53TAAR1CYP2A6LPLLIPG
SCHEMBL6748537 0.90 TP53 (0.36) TP53TAAR1CYP2A6LPLLIPG
SCHEMBL50701 0.88 NQO1 (0.35)
SCHEMBL20478197 0.88 NQO1 (0.35)
SCHEMBL3458351 0.86 TAAR1 (0.33) TAAR1LPLLIPG
SCHEMBL6748657 0.86 NISCH (0.36) TP53LPLLIPGSMN1; SMN2NPC1
SCHEMBL544789 0.83 NQO1 (0.32)
SCHEMBL3482026 0.83 TP53 (0.36) TP53TAAR1CYP2A6LPLLIPG
SCHEMBL6661261 0.83
SCHEMBL2946064 0.83 TRPA1 (0.36) ALDH1A1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-103814064-B Sol-gel derived compositions ABS材料股份有限公司 2017-12-08 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed