SCHEMBL3482545

SCHEMBL3482545

CC[SiH](O)[SiH2][SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481866 0.75
SCHEMBL5053771 0.69 TSHR (0.40)
SCHEMBL3481668 0.67
SCHEMBL1006032 0.67
SCHEMBL8385759 0.65
SCHEMBL116896 0.62
SCHEMBL8380605 0.62
SCHEMBL6061585 0.60
SCHEMBL703345 0.57
SCHEMBL915464 0.57

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 54 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1441887-B1 ANTI-ADHESIVELY COATED FORMING TOOLS MOMENTIVE PERFORMANCE MAT GMBH (DE) 2018-05-16 EP disclosed
EP-2986680-B1 BURIED CLAY/NANOSILICA STATIC DISSIPATIVE COATINGS 3M INNOVATIVE PROPERTIES CO (US) 2017-05-17 EP disclosed
EP-2986680-A2 BURIED CLAY/NANOSILICA STATIC DISSIPATIVE COATINGS 3M Innovative Properties Company (US) 2016-02-24 EP disclosed
US-20160032162-A1 BURIED CLAY/NANOSILICA STATIC DISSIPATIVE COATINGS 3M INNOVATIVE PROPERTIES COMPANY 2016-02-04 US disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
WO-2014172139-A2 BURIED CLAY/NANOSILICA STATIC DISSIPATIVE COATINGS 3M INNOVATIVE PROPERTIES COMPANY (US) 2014-10-23 WO disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
EP-1969595-A2 STORAGE MEDIA AND ASSOCIATED METHOD GENERAL ELECTRIC COMPANY (US) 2008-09-17 EP disclosed
EP-0020632-A1 ABRASION RESISTANT SILICONE COATED POLYCARBONATE ARTICLE AND PROCESS FOR ITS MANUFACTURE. GEN ELECTRIC (US) 1981-01-07 EP disclosed
US-4242381-A THERMOSETTING ACRYLIC PRIMER WITH BENZYLIDENE MALONATE OR CYANOACRYLATE UV ABSORBER GENERAL ELECTRIC COMPANY (US) 1980-12-30 US disclosed
US-4239798-A METHYLSILANETRIOL POLYMER FILLED WITH SILICA GENERAL ELECTRIC COMPANY (US) 1980-12-16 US disclosed
US-4218508-A ULTRAVIOLET RADIATION CURABLE PRIMER GENERAL ELECTRIC COMPANY (US) 1980-08-19 US disclosed
US-4210699-A Abrasion resistant silicone coated polycarbonate article GENERAL ELECTRIC COMPANY (US) 1980-07-01 US disclosed
US-4207357-A PRIMING WITH THERMOSETTING ACRYLIC POLYMER GENERAL ELECTRIC COMPANY (US) 1980-06-10 US disclosed
WO-1980000969-A1 METHOD FOR COATING A POLYCARBONATE ARTICLE WITH SILICA FILLED ORGANOPOLYSILOXANE GEN ELECTRIC (US) 1980-05-15 WO disclosed
WO-1980001006-A1 ABRASION RESISTANT SILICONE COATED POLYCARBONATE ARTICLE GEN ELECTRIC (US) 1980-05-15 WO disclosed
WO-1980001007-A1 ABRASION RESISTANT SILICONE COATED POLYCARBONATE ARTICLE GEN ELECTRIC (US) 1980-05-15 WO disclosed
US-4188451-A MAR AND SOLVENT RESISTANT OVERCOATING, UNSATURATED SILICON CONTAINING POLYMER, SILICA AND A POLYSILOXANE GENERAL ELECTRIC COMPANY (US) 1980-02-12 US disclosed