SCHEMBL3482557

SCHEMBL3482557

Cc1ccccc1-c1ccc(CO[SiH3])cc1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA12 O43570 1/20 0.43
CA1 P00915 1/20 0.43
CA2 P00918 1/20 0.43
CA9 Q16790 1/20 0.43
PPARG P37231 2/20 0.42
PPARA Q07869 1/20 0.42
HDAC8 Q9BY41 1/20 0.42
HDAC6 Q9UBN7 1/20 0.42
HTR7 P34969 2/20 0.40
GBA1 P04062 1/20 0.40
UGCG Q16739 1/20 0.40
GBA2 Q9HCG7 1/20 0.40
MME P08473 1/20 0.38
FFAR1 O14842 2/20 0.37
MGLL Q99685 1/20 0.37
FFAR4 Q5NUL3 1/20 0.37
ENPP3 O14638 1/20 0.37
ENPP1 P22413 1/20 0.37
IDO1 P14902 2/20 0.37
AGXT P21549 2/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481863 0.82 HTR7 (0.41) CA12CA1CA2CA9PPARG
SCHEMBL10296086 0.80 CA12 (0.42) CA12CA1CA2CA9PPARG
SCHEMBL3482613 0.80 HTR7 (0.40) CA12CA1CA2CA9PPARG
SCHEMBL29551674 0.77 CA12 (0.61) CA12CA1CA2CA9PPARG
SCHEMBL3633054 0.77 CA12 (0.61) CA12CA1CA2CA9PPARG
SCHEMBL9817061 0.76 CA12 (0.48) CA12CA1CA2CA9PPARG
SCHEMBL8188945 0.76 HDAC8 (0.50) CA12CA1CA2CA9PPARG
SCHEMBL4541662 0.75 CA12 (0.59) CA12CA1CA2CA9PPARG
SCHEMBL29551646 0.75 CA12 (0.59) CA12CA1CA2CA9PPARG
SCHEMBL11280987 0.75 CA12 (0.47) CA12CA1CA2CA9PPARG

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed