SCHEMBL3481863

SCHEMBL3481863

Cc1ccccc1-c1ccc(CCO[SiH3])cc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HTR7 P34969 2/20 0.41
CA12 O43570 1/20 0.41
CA1 P00915 1/20 0.41
CA2 P00918 1/20 0.41
CA9 Q16790 1/20 0.41
PPARG P37231 1/20 0.40
PPARA Q07869 1/20 0.40
HDAC8 Q9BY41 1/20 0.40
HDAC6 Q9UBN7 1/20 0.40
S1PR1 P21453 1/20 0.39
S1PR3 Q99500 1/20 0.39
FFAR1 O14842 4/20 0.39
FFAR4 Q5NUL3 3/20 0.39
MAOB P27338 2/20 0.38
TNF P01375 1/20 0.37
MME P08473 1/20 0.36
GBA1 P04062 1/20 0.36
UGCG Q16739 1/20 0.36
GBA2 Q9HCG7 1/20 0.36
MGLL Q99685 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482613 0.90 HTR7 (0.40) HTR7CA12CA1CA2CA9
SCHEMBL3482557 0.82 CA12 (0.43) HTR7CA12CA1CA2CA9
SCHEMBL4981917 0.78 TDP1 (0.52) HTR7CA12CA1CA2CA9
SCHEMBL10900648 0.77 HTR7 (0.67) HTR7CA12CA1CA2CA9
SCHEMBL29551674 0.74 CA12 (0.61) HTR7CA12CA1CA2CA9
SCHEMBL3633054 0.74 CA12 (0.61) HTR7CA12CA1CA2CA9
SCHEMBL8188945 0.74 HDAC8 (0.50) HTR7CA12CA1CA2CA9
SCHEMBL9817061 0.74 CA12 (0.48) HTR7CA12CA1CA2CA9
SCHEMBL3481791 0.73 CYP1A2 (0.50)
SCHEMBL523683 0.72 CA1 (0.48) CA1CA2CA9MAOB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed