SCHEMBL3482599

SCHEMBL3482599

CCCO[SiH](C)CCc1ccccc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
IDO1 P14902 1/20 0.37
SIGMAR1 Q99720 2/20 0.37
TP53 P04637 1/20 0.37
SMN1; SMN2 Q16637 2/20 0.36
NPC1 O15118 1/20 0.36
MAPT P10636 1/20 0.36
NFKB1 P19838 1/20 0.36
RAB9A P51151 1/20 0.36
NFKB2 Q00653 1/20 0.36
RELA Q04206 1/20 0.36
ALDH1A1 P00352 1/20 0.35
HPGD P15428 1/20 0.35
ALOX15 P16050 1/20 0.35
ALOX12 P18054 1/20 0.35
CASP1 P29466 1/20 0.35
HSD17B10 Q99714 1/20 0.35
TAAR1 Q96RJ0 3/20 0.35
ATM Q13315 1/20 0.35
TDP1 Q9NUW8 2/20 0.35
CHRM2 P08172 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482728 0.85 CA1 (0.38) IDO1SIGMAR1TP53NPC1RAB9A
SCHEMBL3342114 0.85 TP53 (0.39) IDO1SIGMAR1TP53SMN1; SMN2ALDH1A1
SCHEMBL706073 0.83 IDO1 (0.38) IDO1SIGMAR1TP53SMN1; SMN2NPC1
SCHEMBL3482122 0.82 SIGMAR1 (0.42) IDO1SIGMAR1NPC1RAB9ACHRM2
SCHEMBL3481616 0.82 IDO1 (0.47) IDO1SIGMAR1CHRM2HTR1AADRA2A
SCHEMBL3482262 0.81 IDO1 (0.46) IDO1SIGMAR1CHRM2HTR1AADRA2A
SCHEMBL19809414 0.79 CA1 (0.39) IDO1SIGMAR1TP53SMN1; SMN2NPC1
SCHEMBL28938432 0.77 CA1 (0.40) IDO1TP53SMN1; SMN2NPC1RAB9A
SCHEMBL19809436 0.76 IDO1 (0.48) IDO1SIGMAR1CHRM2HTR1AADRA2A
SCHEMBL19809152 0.76 CA1 (0.37) IDO1SIGMAR1TP53SMN1; SMN2NPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed