SCHEMBL3482728

SCHEMBL3482728

CCC[SiH](C)OCCc1ccccc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 1/20 0.38
CA2 P00918 1/20 0.38
CA9 Q16790 1/20 0.38
IDO1 P14902 1/20 0.37
SIGMAR1 Q99720 2/20 0.37
NPC1 O15118 1/20 0.37
RAB9A P51151 1/20 0.37
TP53 P04637 1/20 0.37
ALDH1A1 P00352 1/20 0.35
HPGD P15428 1/20 0.35
ALOX15 P16050 1/20 0.35
ALOX12 P18054 1/20 0.35
CASP1 P29466 1/20 0.35
HSD17B10 Q99714 1/20 0.35
TAAR1 Q96RJ0 2/20 0.35
ATM Q13315 1/20 0.35
TDP1 Q9NUW8 1/20 0.35
CHRM2 P08172 1/20 0.35
HTR1A P08908 1/20 0.35
ADRA2A P08913 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481616 0.89 IDO1 (0.47) IDO1SIGMAR1CHRM2HTR1AADRA2A
SCHEMBL3482122 0.89 SIGMAR1 (0.42) IDO1SIGMAR1NPC1RAB9ACHRM2
SCHEMBL3482599 0.85 IDO1 (0.37) IDO1SIGMAR1NPC1RAB9ATP53
SCHEMBL28938432 0.85 CA1 (0.40) CA1CA2CA9IDO1NPC1
SCHEMBL6699021 0.84 HTR2A (0.47) CA1CA2CA9IDO1NPC1
SCHEMBL707033 0.83 TDP1 (0.40) CA1CA2CA9IDO1SIGMAR1
SCHEMBL3481498 0.81 TSHR (0.43) CA1CA2CA9IDO1TP53
SCHEMBL3482262 0.81 IDO1 (0.46) IDO1SIGMAR1CHRM2HTR1AADRA2A
SCHEMBL19809152 0.80 CA1 (0.37) CA1CA2CA9IDO1SIGMAR1
SCHEMBL3481879 0.80 TDP1 (0.38) CA1CA2CA9IDO1SIGMAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115181223-B Low-gloss matte auxiliary agent, preparation method thereof and molded body 铨盛聚碳科技股份有限公司 2023-08-29 CN claimed
CN-115181223-A Low-gloss matte auxiliary agent, preparation method thereof and formed body 铨盛聚碳科技股份有限公司 2022-10-14 CN claimed
CN-115181223-B Low-gloss matte auxiliary agent, preparation method thereof and molded body 铨盛聚碳科技股份有限公司 2023-08-29 CN disclosed
CN-115181223-A Low-gloss matte auxiliary agent, preparation method thereof and formed body 铨盛聚碳科技股份有限公司 2022-10-14 CN disclosed
CN-114085382-A Hydrogen-containing poly titanium boron siloxane flame retardant, and preparation method and application thereof 铨盛聚碳科技股份有限公司 2022-02-25 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed