SCHEMBL3482633

SCHEMBL3482633

CCCCC=CCCC[SiH2]OCC

nearest known ligand 0.40

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
LPAR3 Q9UBY5 4/20 0.40
LPAR2 Q9HBW0 3/20 0.39
LPAR1 Q92633 2/20 0.39
FAAH O00519 6/20 0.37
GGPS1 O95749 1/20 0.36
TRPV1 Q8NER1 2/20 0.35
F7 P08709 1/20 0.35
F3 P13726 1/20 0.35
MEN1 O00255 1/20 0.33
ALDH1A1 P00352 1/20 0.33
MAPT P10636 1/20 0.33
PLA2G4A P47712 1/20 0.33
PAFAH1B2 P68402 1/20 0.33
KMT2A Q03164 1/20 0.33
MGLL Q99685 1/20 0.33
ABHD6 Q9BV23 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481957 0.85 LPAR3 (0.42) LPAR3LPAR2LPAR1FAAHGGPS1
SCHEMBL703265 0.81
SCHEMBL3482219 0.80 LPAR3 (0.40) LPAR3LPAR2LPAR1FAAHGGPS1
SCHEMBL22534490 0.79
SCHEMBL3481785 0.78 LPAR3 (0.37) LPAR3LPAR2LPAR1FAAHALDH1A1
SCHEMBL13864683 0.77 TSHR (0.42) MEN1ALDH1A1KMT2A
SCHEMBL31138853 0.77 TSHR (0.42) MEN1ALDH1A1KMT2A
SCHEMBL1614337 0.77 TSHR (0.42) MEN1ALDH1A1KMT2A
SCHEMBL2119923 0.77 TSHR (0.42) MEN1ALDH1A1KMT2A
SCHEMBL27840191 0.77 TSHR (0.42) MEN1ALDH1A1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed