SCHEMBL3481785

SCHEMBL3481785

CCC=CCCCO[SiH2]CCCC

nearest known ligand 0.39

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
LPAR3 Q9UBY5 7/20 0.37
LPAR2 Q9HBW0 6/20 0.36
LPAR1 Q92633 3/20 0.36
NR1I2 O75469 1/20 0.35
PGR P06401 1/20 0.35
ADORA3 P0DMS8 1/20 0.35
PTGS2 P35354 1/20 0.35
PDE4D Q08499 1/20 0.35
FAAH O00519 2/20 0.34
ALDH1A1 P00352 1/20 0.33
CYP3A4 P08684 1/20 0.33
ALOX15 P16050 1/20 0.33
TSHR P16473 1/20 0.33
HSD17B10 Q99714 1/20 0.33
TDP1 Q9NUW8 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482273 0.90 LPAR3 (0.37) LPAR3LPAR2LPAR1NR1I2PGR
SCHEMBL3482732 0.90 LPAR3 (0.33) LPAR3LPAR2LPAR1
SCHEMBL3481503 0.85 FAAH (0.34) LPAR3FAAH
SCHEMBL3481957 0.80 LPAR3 (0.42) LPAR3LPAR2LPAR1FAAHALDH1A1
SCHEMBL705779 0.79 ADRB2 (0.39) ALDH1A1CYP3A4TSHR
SCHEMBL3482429 0.78 LPAR2 (0.32) LPAR3LPAR2LPAR1
SCHEMBL3482600 0.78
SCHEMBL3482633 0.78 LPAR3 (0.40) LPAR3LPAR2LPAR1FAAHALDH1A1
SCHEMBL11210371 0.74 THRB (0.40) LPAR3LPAR2LPAR1TSHR
SCHEMBL11350247 0.74 THRB (0.40) LPAR3LPAR2LPAR1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed