SCHEMBL3483401

SCHEMBL3483401

C=CC[SiH]1CCCCO1.[HH]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL129239 0.98
Ammonia Solution, Strong SCHEMBL278128 0.96
Ammonia Solution, Strong SCHEMBL7099069 0.96
SCHEMBL2160293 0.96
SCHEMBL10771281 0.96
Alcohol SCHEMBL28839408 0.88
SCHEMBL28608591 0.87
Acrylic Acid SCHEMBL27709464 0.85 LMNA (0.34)
Acrylamide SCHEMBL29277077 0.84 ALDH1A1 (0.37)
SCHEMBL15021984 0.81

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7816280-B2 Semiconductor device, semiconductor wafer, and methods of producing the same device and wafer NEC ELECTRONICS CORPORATION (JP) 2010-10-19 US disclosed
US-7674721-B2 Semiconductor device, semiconductor wafer, and methods of producing same device and wafer NEC ELECTRONICS CORPORATION (JP) 2010-03-09 US disclosed
US-7602048-B2 Semiconductor device and semiconductor wafer having a multi-layered insulation film NEC ELECTRONICS CORPORATION (JP) 2009-10-13 US disclosed
US-20090137108-A1 Semiconductor device, semiconductor wafer, and methods of producing the same device and wafer NEC ELECTRONICS CORPORATION (JP) 2009-05-28 US disclosed
US-20070207610-A1 Semiconductor device, semiconductor wafer, and methods of producing same device and wafer NEC ELECTRONICS CORPORATION (JP) 2007-09-06 US disclosed
US-7229910-B2 Method of producing a semiconductor device having a multi-layered insulation film NEC ELECTRONICS CORPORATION (JP) 2007-06-12 US disclosed
US-7229915-B2 Method for manufacturing semiconductor device NEC ELECTRONICS CORPORATION (JP) 2007-06-12 US disclosed
US-20050191850-A1 Method for manufacturing semiconductor device SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. (JP) 2005-09-01 US disclosed
US-20050153536-A1 Method for manufacturing semiconductor device SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. (JP) 2005-07-14 US disclosed
US-20020127807-A1 Semiconductor device, semiconductor wafer, and methods of producing the same device and wafer DTS LLC 2002-09-12 US disclosed
US-20010051447-A1 Interfacial adhesion FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS) 2001-12-13 US disclosed