SCHEMBL352510

SCHEMBL352510

CC1(c2ccc(O)cc2O)CC(c2ccc(O)cc2)c2ccc(O)cc2O1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.47
SMN1; SMN2 Q16637 2/20 0.43
KDM4E B2RXH2 2/20 0.43
TDP1 Q9NUW8 2/20 0.43
L3MBTL1 Q9Y468 1/20 0.43
MAPT P10636 3/20 0.42
MEN1 O00255 3/20 0.42
KMT2A Q03164 3/20 0.42
THRB P10828 1/20 0.42
ALOX12 P18054 3/20 0.41
ESR1 P03372 3/20 0.39
ESR2 Q92731 3/20 0.39
HIF1A Q16665 1/20 0.36
TTR P02766 2/20 0.36
CYP3A4 P08684 2/20 0.36
CYP19A1 P11511 2/20 0.36
CA12 O43570 1/20 0.36
SLCO2B1 O94956 1/20 0.36
SHBG P04278 1/20 0.36
CYP1A1 P04798 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30497725 1.00 LMNA (0.47) LMNASMN1; SMN2KDM4ETDP1L3MBTL1
SCHEMBL24299405 0.75 FTO (0.55) LMNAKDM4ETDP1MAPTMEN1
SCHEMBL30717253 0.75 FTO (0.55) LMNAKDM4ETDP1MAPTMEN1
SCHEMBL772979 0.75 FTO (0.55) LMNAKDM4ETDP1MAPTMEN1
SCHEMBL11357106 0.74 KDM4E (0.50) LMNASMN1; SMN2KDM4ETDP1L3MBTL1
SCHEMBL13615616 0.73 FTO (0.43) LMNAKDM4ETDP1MAPTMEN1
SCHEMBL11370996 0.72 LMNA (0.45) LMNASMN1; SMN2KDM4ETDP1L3MBTL1
SCHEMBL674309 0.71 ESR2 (0.41) LMNAMAPTMEN1KMT2ATHRB
SCHEMBL29374049 0.71 ESR2 (0.41) LMNAMAPTMEN1KMT2ATHRB
SCHEMBL11476249 0.69 MAPT (0.46) LMNASMN1; SMN2KDM4ETDP1L3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117751327-A Positive photosensitive resin composition containing specific copolymer 日产化学株式会社 2024-03-22 CN disclosed
CN-117677901-A Positive photosensitive resin composition 日产化学株式会社 2024-03-08 CN disclosed
CN-117590689-A Radiation-sensitive composition, cured film, method for producing same, display device, and curable resin composition JSR株式会社 2024-02-23 CN disclosed
CN-108333869-B Photosensitive composition, cured film, method for producing same, and display element, light-emitting element, and light-receiving element JSR株式会社 2023-07-18 CN disclosed
CN-113589647-A Radiation-sensitive composition, method for producing cured film, semiconductor element, and display element JSR株式会社 2021-11-02 CN disclosed
WO-2020240993-A1 RESIN COMPOSITION AND RESIN FILM 昭和電工株式会社 2020-12-03 WO disclosed
CN-104871089-B Photosensitive resin composition, method for producing cured film, organic EL display device, and liquid crystal display device 富士胶片株式会社 2020-01-14 CN disclosed
CN-103543607-B Organic EL element, radiation sensitive linear resin composition and cured film JSR株式会社 2019-11-29 CN disclosed
CN-110286561-A Radiation sensitive compositions, cured film and display element JSR株式会社 2019-09-27 CN disclosed
CN-102859439-B Positive radiation-sensitive composition, display element interlayer dielectric and forming method thereof JSR株式会社 2017-06-30 CN disclosed
US-8535873-B2 Photosensitive resin composition SHOWA DENKO K.K. (JP) 2013-09-17 US disclosed
CN-101515113-B Radioactive ray sensibility resin composition, interlayer insulating film, microlens and method of forming the same JSR CORP 2012-07-18 CN disclosed
US-20120015300-A1 PHOTOSENSITIVE RESIN COMPOSITION RESONAC CORPORATION (JP) 2012-01-19 US disclosed
CN-101025567-B Radiation-sensitive resin composition, method for forming spacer and spacer JSR CO., LTD. (JP) 2011-12-14 CN disclosed
US-20110281040-A1 LIQUID CRYSTAL DISPLAY ELEMENT, POSITIVE TYPE RADIATION SENSITIVE COMPOSITION, INTERLAYER INSULATING FILM FOR LIQUID CRYSTAL DISPLAY ELEMENT, AND FORMATION METHOD THEREOF JSR CORPORATION (JP) 2011-11-17 US disclosed
US-7749678-B2 contains sulfonium compound; improved line edge roughness and pattern profile, and contrast of sensitivity and dissolution in extreme ultraviolet exposure FUJIFILM CORPORATION (JP) 2010-07-06 US disclosed
US-7749678-B2 contains sulfonium compound; improved line edge roughness and pattern profile, and contrast of sensitivity and dissolution in extreme ultraviolet exposure FUJIFILM CORPORATION (JP) 2010-07-06 US disclosed
EP-0735423-B1 Radiation sensitive resin composition JSR CORP (JP) 1999-03-03 EP disclosed
US-5672459-A PHOTORESISTS, INTEGRATED CIRCUITS JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1997-09-30 US disclosed
EP-0735423-A1 Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1996-10-02 EP disclosed