SCHEMBL3529059

SCHEMBL3529059

O=S(=O)(O)c1c(C2CCC(C3CCCCC3)CC2)cc(C2CCC(C3CCCCC3)CC2)cc1C1CCC(C2CCCCC2)CC1

nearest known ligand 0.33

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.33
HTT P42858 1/20 0.33
KMO O15229 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
ACMSD Q8TDX5 1/20 0.30
APOBEC3A P31941 1/20 0.30
APOBEC3G Q9HC16 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL683462 0.90 KMO (0.38) LMNAHTTKMOSMN1; SMN2ACMSD
SCHEMBL2758386 0.90 KMO (0.38) LMNAHTTKMOSMN1; SMN2ACMSD
SCHEMBL2758385 0.90 KMO (0.38) LMNAHTTKMOSMN1; SMN2ACMSD
SCHEMBL2317192 0.88 KMO (0.37) LMNAHTTKMOSMN1; SMN2ACMSD
SCHEMBL2758387 0.88 HDAC8 (0.36) LMNAHTTKMOSMN1; SMN2ACMSD
SCHEMBL2758390 0.88 FABP3 (0.31)
SCHEMBL2758389 0.84 HDAC8 (0.33) LMNAHTTKMOACMSD
SCHEMBL19140888 0.84 ESR2 (0.38) LMNAHTTKMOSMN1; SMN2ACMSD
SCHEMBL19853088 0.82
SCHEMBL10149888 0.82 KMO (0.35) LMNAHTTKMOSMN1; SMN2ACMSD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9223219-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film FUJIFILM CORPORATION (JP) 2015-12-29 US disclosed
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
US-8999621-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2015-04-07 US disclosed
US-8808965-B2 Pattern forming method, pattern, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2014-08-19 US disclosed
US-20120322007-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-12-20 US disclosed
US-20120094235-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-04-19 US disclosed